Temperature dependence of electrical properties in In/Cu 2 ZnSnTe 4 /Si/Ag diodes

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dc.authorscopusid36766075800
dc.authorscopusid16023635100
dc.authorscopusid55660608000
dc.authorscopusid57193666915
dc.authorscopusid7003589218
dc.contributor.authorGüllü, H. H.
dc.contributor.authorYıldız, D. E.
dc.contributor.authorBayraklı Sürücü, Özge
dc.contributor.authorTerlemezoğlu, Makbule
dc.contributor.authorParlak, Mehmet
dc.date.accessioned2022-05-11T14:03:16Z
dc.date.available2022-05-11T14:03:16Z
dc.date.issued2019
dc.departmentFakülteler, Fen Edebiyat Fakültesi, Fizik Bölümü
dc.description.abstractCu 2 ZnSnTe 4 (CZTTe) thin films with In metal contact were deposited by thermal evaporation on monocrystalline n-type Si wafers with Ag ohmic contact to investigate the device characteristics of an In/CZTTe/Si/Ag diode. The variation in electrical characteristics of the diode was analysed by carrying out current–voltage (I–V) measurements in the temperature range of 220–360 K. The forward bias I–V behaviour was modelled according to the thermionic emission (TE) theory to obtain main diode parameters. In addition, the experimental data were detailed by taking into account the presence of an interfacial layer and possible dominant current transport mechanisms were studied under analysis of ideality factor, n. Strong effects of temperature were observed on zero-bias barrier height (? B 0 ) and n values due to barrier height inhomogeneity at the interface. The anomaly observed in the analysis of TE was modelled by Gaussian distribution (GD) of barrier heights with 0.844 eV mean barrier height and 0.132 V standard deviation. According to the Tung’s theoretical approach, a linear correlation between ? B 0 and n cannot be satisfied, and thus the modified Richardson plot was used to determine Richardson constant (A ? ). As a result, A ? was calculated approximately as 120.6Acm-2K-2 very close to the theoretical value for n-Si. In addition, the effects of series resistance (R s ) by estimating from Cheng’s function and density of surface states (N ss ) by taking the bias dependence of effective barrier height, were discussed. © 2019, Indian Academy of Sciences.
dc.identifier.doi10.1007/s12034-018-1713-0
dc.identifier.issn0250-4707
dc.identifier.issue2en_US
dc.identifier.scopus2-s2.0-85061386542
dc.identifier.scopusqualityQ3
dc.identifier.urihttps://doi.org/10.1007/s12034-018-1713-0
dc.identifier.urihttps://hdl.handle.net/20.500.11776/4658
dc.identifier.volume42
dc.identifier.wosWOS:000458625200001
dc.identifier.wosqualityQ4
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.institutionauthorTerlemezoğlu, Makbule
dc.language.isoen
dc.publisherIndian Academy of Sciences
dc.relation.ispartofBulletin of Materials Science
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/openAccess
dc.subjectbarrier inhomogeneity
dc.subjectGaussian distribution
dc.subjectI–V characteristics
dc.subjectseries resistance
dc.subjectTemperature dependence
dc.subjectCopper compounds
dc.subjectDiodes
dc.subjectElectric resistance
dc.subjectGaussian distribution
dc.subjectOhmic contacts
dc.subjectSilicon wafers
dc.subjectTellurium compounds
dc.subjectThermal evaporation
dc.subjectThermionic emission
dc.subjectTin compounds
dc.subjectZinc compounds
dc.subjectBarrier height inhomogeneity
dc.subjectBarrier inhomogeneities
dc.subjectCurrent transport mechanism
dc.subjectEffective barrier heights
dc.subjectEffects of temperature
dc.subjectElectrical characteristic
dc.subjectSeries resistances
dc.subjectTemperature dependence
dc.subjectTemperature distribution
dc.titleTemperature dependence of electrical properties in In/Cu 2 ZnSnTe 4 /Si/Ag diodes
dc.typeArticle

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