Temperature dependence of electrical properties in In/Cu 2 ZnSnTe 4 /Si/Ag diodes
Yükleniyor...
Dosyalar
Tarih
2019
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Indian Academy of Sciences
Erişim Hakkı
info:eu-repo/semantics/openAccess
Özet
Cu 2 ZnSnTe 4 (CZTTe) thin films with In metal contact were deposited by thermal evaporation on monocrystalline n-type Si wafers with Ag ohmic contact to investigate the device characteristics of an In/CZTTe/Si/Ag diode. The variation in electrical characteristics of the diode was analysed by carrying out current–voltage (I–V) measurements in the temperature range of 220–360 K. The forward bias I–V behaviour was modelled according to the thermionic emission (TE) theory to obtain main diode parameters. In addition, the experimental data were detailed by taking into account the presence of an interfacial layer and possible dominant current transport mechanisms were studied under analysis of ideality factor, n. Strong effects of temperature were observed on zero-bias barrier height (? B 0 ) and n values due to barrier height inhomogeneity at the interface. The anomaly observed in the analysis of TE was modelled by Gaussian distribution (GD) of barrier heights with 0.844 eV mean barrier height and 0.132 V standard deviation. According to the Tung’s theoretical approach, a linear correlation between ? B 0 and n cannot be satisfied, and thus the modified Richardson plot was used to determine Richardson constant (A ? ). As a result, A ? was calculated approximately as 120.6Acm-2K-2 very close to the theoretical value for n-Si. In addition, the effects of series resistance (R s ) by estimating from Cheng’s function and density of surface states (N ss ) by taking the bias dependence of effective barrier height, were discussed. © 2019, Indian Academy of Sciences.
Açıklama
Anahtar Kelimeler
barrier inhomogeneity, Gaussian distribution, I–V characteristics, series resistance, Temperature dependence, Copper compounds, Diodes, Electric resistance, Gaussian distribution, Ohmic contacts, Silicon wafers, Tellurium compounds, Thermal evaporation, Thermionic emission, Tin compounds, Zinc compounds, Barrier height inhomogeneity, Barrier inhomogeneities, Current transport mechanism, Effective barrier heights, Effects of temperature, Electrical characteristic, Series resistances, Temperature dependence, Temperature distribution
Kaynak
Bulletin of Materials Science
WoS Q Değeri
Q4
Scopus Q Değeri
Q3
Cilt
42
Sayı
2
