Material and Si-based diode analyses of sputtered ZnTe thin films

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dc.authorscopusid36766075800
dc.authorscopusid57222350312
dc.authorscopusid23766993100
dc.authorscopusid57193666915
dc.authorscopusid7003589218
dc.contributor.authorGüllü, H. H.
dc.contributor.authorSurucu, O.B.
dc.contributor.authorIşık, M.
dc.contributor.authorTerlemezoğlu, Makbule
dc.contributor.authorParlak, Mehmet
dc.date.accessioned2022-05-11T14:03:18Z
dc.date.available2022-05-11T14:03:18Z
dc.date.issued2020
dc.departmentFakülteler, Fen Edebiyat Fakültesi, Fizik Bölümü
dc.description.abstractStructural, optical, and electrical properties ZnTe thin films grown by magnetron sputtering technique were studied by X-ray diffraction, atomic force microscopy, Raman spectroscopy, and electrical conductivity measurements. Structural analyses showed that ZnTe thin films grown on soda–lime glass substrates have a cubic crystalline structure. This crystalline nature of the films was also discussed in terms of Raman active modes. From atomic force microscopy images, the smooth and dense surface profile was observed. The conductivity of the film at room temperature was measured as 2.45 × 10?4 (? cm)?1 and the temperature dependency of conductivity showed Arrhenius behavior. The dark conductivity profile was modeled by thermionic emission mechanism and activation energies were extracted. In addition, the conductivity values indicated an increasing behavior with illumination intensity applied between 20 and 115 mW/cm2. The heterojunction diode was generated by sputtering ZnTe film on n-Si wafer substrate and the rectification behavior was evaluated to determine the main diode parameters. © 2020, Springer Science+Business Media, LLC, part of Springer Nature.
dc.identifier.doi10.1007/s10854-020-03688-x
dc.identifier.endpage11397
dc.identifier.issn0957-4522
dc.identifier.issue14en_US
dc.identifier.scopus2-s2.0-85085651060
dc.identifier.scopusqualityQ2
dc.identifier.startpage11390
dc.identifier.urihttps://doi.org/10.1007/s10854-020-03688-x
dc.identifier.urihttps://hdl.handle.net/20.500.11776/4663
dc.identifier.volume31
dc.identifier.wosWOS:000544091600042
dc.identifier.wosqualityQ3
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.institutionauthorTerlemezoğlu, Makbule
dc.language.isoen
dc.publisherSpringer
dc.relation.ispartofJournal of Materials Science: Materials in Electronics
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectActivation energy
dc.subjectCrystal atomic structure
dc.subjectHeterojunctions
dc.subjectII-VI semiconductors
dc.subjectLime
dc.subjectNanocrystalline materials
dc.subjectSemiconductor diodes
dc.subjectSilicon compounds
dc.subjectSilicon wafers
dc.subjectSubstrates
dc.subjectTellurium compounds
dc.subjectThermionic emission
dc.subjectZinc compounds
dc.subjectArrhenius behaviors
dc.subjectCrystalline nature
dc.subjectElectrical conductivity measurements
dc.subjectHeterojunction diodes
dc.subjectIllumination intensity
dc.subjectRaman active modes
dc.subjectRectification behavior
dc.subjectTemperature dependencies
dc.subjectThin films
dc.titleMaterial and Si-based diode analyses of sputtered ZnTe thin films
dc.typeArticle

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