Material and Si-based diode analyses of sputtered ZnTe thin films
Yükleniyor...
Dosyalar
Tarih
2020
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Springer
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
Structural, optical, and electrical properties ZnTe thin films grown by magnetron sputtering technique were studied by X-ray diffraction, atomic force microscopy, Raman spectroscopy, and electrical conductivity measurements. Structural analyses showed that ZnTe thin films grown on soda–lime glass substrates have a cubic crystalline structure. This crystalline nature of the films was also discussed in terms of Raman active modes. From atomic force microscopy images, the smooth and dense surface profile was observed. The conductivity of the film at room temperature was measured as 2.45 × 10?4 (? cm)?1 and the temperature dependency of conductivity showed Arrhenius behavior. The dark conductivity profile was modeled by thermionic emission mechanism and activation energies were extracted. In addition, the conductivity values indicated an increasing behavior with illumination intensity applied between 20 and 115 mW/cm2. The heterojunction diode was generated by sputtering ZnTe film on n-Si wafer substrate and the rectification behavior was evaluated to determine the main diode parameters. © 2020, Springer Science+Business Media, LLC, part of Springer Nature.
Açıklama
Anahtar Kelimeler
Activation energy, Crystal atomic structure, Heterojunctions, II-VI semiconductors, Lime, Nanocrystalline materials, Semiconductor diodes, Silicon compounds, Silicon wafers, Substrates, Tellurium compounds, Thermionic emission, Zinc compounds, Arrhenius behaviors, Crystalline nature, Electrical conductivity measurements, Heterojunction diodes, Illumination intensity, Raman active modes, Rectification behavior, Temperature dependencies, Thin films
Kaynak
Journal of Materials Science: Materials in Electronics
WoS Q Değeri
Q3
Scopus Q Değeri
Q2
Cilt
31
Sayı
14
