Vibrational modes in ( TlGaS2)x?(TlGaSe2)1?x mixed crystals by Raman measurements: compositional dependence of the mode frequencies and line?shapes

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dc.authorscopusid23766993100
dc.authorscopusid57193666915
dc.authorscopusid35580905900
dc.authorscopusid6603642141
dc.contributor.authorIşık, M.
dc.contributor.authorTerlemezoğlu, Makbule
dc.contributor.authorGasanly, Nizami Mamed
dc.contributor.authorBabayeva, R.F.
dc.date.accessioned2022-05-11T14:03:19Z
dc.date.available2022-05-11T14:03:19Z
dc.date.issued2020
dc.departmentFakülteler, Fen Edebiyat Fakültesi, Fizik Bölümü
dc.description.abstractTlGaS2 and TlGaSe2 ternary semiconducting compounds have been of scientific interest due to their large ultrafast optical nonlinearity characteristics. These remarkable properties make them promising semiconducting materials in photonic applications. A series of (TlGaS2)x?(TlGaSe2)1?x layered mixed crystals grown by Bridgman method were investigated from the standpoint of their Raman spectroscopy characteristics. Experimental Raman scattering study of crystals were reported in the frequency range of 80–400 cm?1 for compositions of x = 0, 0.25, 0.50, 0.75 and 1.0. The effects of crystal disorder on the line-width broadening of Raman-active modes were studied in detail. The asymmetry in the Raman line-shape was analyzed for two highest-frequency intralayer mode presenting two-mode behavior. It was shown that mixed crystal disorder effect is the major source for change of Raman line-shape with composition. © 2020, Springer Science+Business Media, LLC, part of Springer Nature.
dc.identifier.doi10.1007/s10854-020-03990-8
dc.identifier.endpage14335
dc.identifier.issn0957-4522
dc.identifier.issue17en_US
dc.identifier.scopus2-s2.0-85087816836
dc.identifier.scopusqualityQ2
dc.identifier.startpage14330
dc.identifier.urihttps://doi.org/10.1007/s10854-020-03990-8
dc.identifier.urihttps://hdl.handle.net/20.500.11776/4668
dc.identifier.volume31
dc.identifier.wosWOS:000548260800005
dc.identifier.wosqualityQ3
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.institutionauthorTerlemezoğlu, Makbule
dc.language.isoen
dc.publisherSpringer
dc.relation.ispartofJournal of Materials Science: Materials in Electronics
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectCrystal growth from melt
dc.subjectCrystals
dc.subjectNonlinear optics
dc.subjectRaman scattering
dc.subjectSelenium compounds
dc.subjectSemiconducting gallium compounds
dc.subjectSemiconducting selenium compounds
dc.subjectCompositional dependence
dc.subjectOptical nonlinearity
dc.subjectPhotonic application
dc.subjectRaman active modes
dc.subjectRaman measurements
dc.subjectSemiconducting compounds
dc.subjectSemiconducting materials
dc.subjectTwo-mode behavior
dc.subjectSulfur compounds
dc.titleVibrational modes in ( TlGaS2)x?(TlGaSe2)1?x mixed crystals by Raman measurements: compositional dependence of the mode frequencies and line?shapes
dc.typeArticle

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