Vibrational modes in ( TlGaS2)x?(TlGaSe2)1?x mixed crystals by Raman measurements: compositional dependence of the mode frequencies and line?shapes
Yükleniyor...
Dosyalar
Tarih
2020
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Springer
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
TlGaS2 and TlGaSe2 ternary semiconducting compounds have been of scientific interest due to their large ultrafast optical nonlinearity characteristics. These remarkable properties make them promising semiconducting materials in photonic applications. A series of (TlGaS2)x?(TlGaSe2)1?x layered mixed crystals grown by Bridgman method were investigated from the standpoint of their Raman spectroscopy characteristics. Experimental Raman scattering study of crystals were reported in the frequency range of 80–400 cm?1 for compositions of x = 0, 0.25, 0.50, 0.75 and 1.0. The effects of crystal disorder on the line-width broadening of Raman-active modes were studied in detail. The asymmetry in the Raman line-shape was analyzed for two highest-frequency intralayer mode presenting two-mode behavior. It was shown that mixed crystal disorder effect is the major source for change of Raman line-shape with composition. © 2020, Springer Science+Business Media, LLC, part of Springer Nature.
Açıklama
Anahtar Kelimeler
Crystal growth from melt, Crystals, Nonlinear optics, Raman scattering, Selenium compounds, Semiconducting gallium compounds, Semiconducting selenium compounds, Compositional dependence, Optical nonlinearity, Photonic application, Raman active modes, Raman measurements, Semiconducting compounds, Semiconducting materials, Two-mode behavior, Sulfur compounds
Kaynak
Journal of Materials Science: Materials in Electronics
WoS Q Değeri
Q3
Scopus Q Değeri
Q2
Cilt
31
Sayı
17
