Binding energy of 2p-bound state of a hydrogenic donor impurity in a GaAs/Ga1-xAlxAs spherical quantum dot under hydrostatic pressure

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dc.authorid0000-0003-2357-9943
dc.authorid0000-0001-5818-2263
dc.authorscopusid57201860999
dc.authorscopusid55941663900
dc.authorscopusid57208502327
dc.authorwosidBULUT, PINAR/AAS-8846-2020
dc.contributor.authorBulut, Pınar
dc.contributor.authorErdoğan, I.
dc.contributor.authorAkbaş, Halide
dc.date.accessioned2022-05-11T14:29:31Z
dc.date.available2022-05-11T14:29:31Z
dc.date.issued2014
dc.departmentFakülteler, Fen Edebiyat Fakültesi, Fizik Bölümü
dc.description.abstractBy using a variational procedure within the effective mass approximation, we calculated the 2p state binding energy, E-2pha(x,P), and the binding energy turning point, R-2pEbT (X, P) of a hydrogenic donor impurity located at the centre of the GaAs GaAs/Ga1-xAlxAs spherical quantum dot under the influence of hydrostatic pressure. The results obtained show that the binding energy turning point, R-2pEbT(X, P) is an important factor in dealing with the 2p bound state of a hydrogenic donor impurity embedded at the centre of the quantum dot. (C) 2014 Elsevier By. All rights reserved,
dc.identifier.doi10.1016/j.physe.2014.06.020
dc.identifier.endpage303
dc.identifier.issn1386-9477
dc.identifier.issn1873-1759
dc.identifier.scopus2-s2.0-84904326165
dc.identifier.scopusqualityQ2
dc.identifier.startpage299
dc.identifier.urihttps://doi.org/10.1016/j.physe.2014.06.020
dc.identifier.urihttps://hdl.handle.net/20.500.11776/7011
dc.identifier.volume63
dc.identifier.wosWOS:000340627000045
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.institutionauthorBulut, Pınar
dc.language.isoen
dc.publisherElsevier
dc.relation.ispartofPhysica E-Low-Dimensional Systems & Nanostructures
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectTurning point
dc.subjectSpherical dot
dc.subjectDonor impurity
dc.subjectBinding energy
dc.subjectMagnetic-Field
dc.subjectExcited-States
dc.subjectElectric-Field
dc.subjectTransition Energies
dc.subjectGaas-Ga1-Xalxas
dc.subjectWells
dc.subjectWires
dc.titleBinding energy of 2p-bound state of a hydrogenic donor impurity in a GaAs/Ga1-xAlxAs spherical quantum dot under hydrostatic pressure
dc.typeArticle

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