Binding energy of 2p-bound state of a hydrogenic donor impurity in a GaAs/Ga1-xAlxAs spherical quantum dot under hydrostatic pressure
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Dosyalar
Tarih
2014
Yazarlar
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Elsevier
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
By using a variational procedure within the effective mass approximation, we calculated the 2p state binding energy, E-2pha(x,P), and the binding energy turning point, R-2pEbT (X, P) of a hydrogenic donor impurity located at the centre of the GaAs GaAs/Ga1-xAlxAs spherical quantum dot under the influence of hydrostatic pressure. The results obtained show that the binding energy turning point, R-2pEbT(X, P) is an important factor in dealing with the 2p bound state of a hydrogenic donor impurity embedded at the centre of the quantum dot. (C) 2014 Elsevier By. All rights reserved,
Açıklama
Anahtar Kelimeler
Turning point, Spherical dot, Donor impurity, Binding energy, Magnetic-Field, Excited-States, Electric-Field, Transition Energies, Gaas-Ga1-Xalxas, Wells, Wires
Kaynak
Physica E-Low-Dimensional Systems & Nanostructures
WoS Q Değeri
Q2
Scopus Q Değeri
Q2
Cilt
63
