Electrical, structural and morphological properties of Ni/n-Si contacts
Yükleniyor...
Dosyalar
Tarih
2009
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Natl Inst Optoelectronics
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
This paper presents structural, morphological and electrical properties of Ni/n-Si contacts formed by electro-deposition technique. Ni film is deposited on n-type Si (100) substrate using 2 mol/L Nickel Sulphamate, 0.5 mol/L Boric Acid solutions. The morphological properties are investigated by using energy dispersive X-Ray analysis and scanning electron microscopy imaging to perform local distribution of Ni. Electrical measurements have been done at room temperature to investigate the Schottky barrier height.
Açıklama
Anahtar Kelimeler
Electro-deposition, Schottky barrier height, Scanning electron microscopy, Morphological properties, Hydrogen
Kaynak
Optoelectronics and Advanced Materials-Rapid Communications
WoS Q Değeri
Q4
Scopus Q Değeri
Q4
Cilt
3
Sayı
5
