Temperature-tuned band gap properties of MoS2 thin films

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dc.authorscopusid55660608000
dc.authorscopusid23766993100
dc.authorscopusid35580905900
dc.authorscopusid57193666915
dc.authorscopusid7003589218
dc.contributor.authorSürücü, Özge
dc.contributor.authorIşık, Mehmet
dc.contributor.authorGasanly, Nizami Mamed
dc.contributor.authorTerlemezoğlu, Makbule
dc.contributor.authorParlak, Mehmet
dc.date.accessioned2022-05-11T14:03:19Z
dc.date.available2022-05-11T14:03:19Z
dc.date.issued2020
dc.departmentFakülteler, Fen Edebiyat Fakültesi, Fizik Bölümü
dc.description.abstractMoS2 is one of the fascinating members of transition metal dichalcogenides and has attracted great attention due to its various optoelectronic device applications and its characteristic as two-dimensional material. The present paper reports the structural and temperature tuned optical properties of MoS2 thin films grown by RF magnetron sputtering technique. It was observed that the atomic composition ratio of Mo:S was nearly equal to 1:2 and the deposited thin films have hexagonal crystalline structure exhibiting Raman peaks around 376 and 410 cm?1. The band gap energies were determined as 1.66 and 1.71 eV at 300 and 10 K, respectively and temperature dependency of band gap energy was analyzed by means of Varshni and O'Donnell-Chen models. © 2020 Elsevier B.V.
dc.identifier.doi10.1016/j.matlet.2020.128080
dc.identifier.issn0167-577X
dc.identifier.scopus2-s2.0-85086383822
dc.identifier.scopusqualityQ2
dc.identifier.urihttps://doi.org/10.1016/j.matlet.2020.128080
dc.identifier.urihttps://hdl.handle.net/20.500.11776/4667
dc.identifier.volume275
dc.identifier.wosWOS:000548642000022
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.institutionauthorTerlemezoğlu, Makbule
dc.language.isoen
dc.publisherElsevier B.V.
dc.relation.ispartofMaterials Letters
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectBand gap energy
dc.subjectMoS2
dc.subjectOptical properties
dc.subjectTemperature dependency
dc.subjectEnergy gap
dc.subjectLayered semiconductors
dc.subjectMagnetron sputtering
dc.subjectMolybdenum compounds
dc.subjectNanocrystalline materials
dc.subjectOptical properties
dc.subjectOptoelectronic devices
dc.subjectTransition metals
dc.subjectAtomic compositions
dc.subjectBandgap properties
dc.subjectHexagonal crystalline
dc.subjectRF magnetron sputtering technique
dc.subjectTemperature dependencies
dc.subjectTemperature tuned
dc.subjectTransition metal dichalcogenides
dc.subjectTwo-dimensional materials
dc.subjectThin films
dc.titleTemperature-tuned band gap properties of MoS2 thin films
dc.typeArticle

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