Temperature-tuned band gap properties of MoS2 thin films
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Dosyalar
Tarih
2020
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Elsevier B.V.
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
MoS2 is one of the fascinating members of transition metal dichalcogenides and has attracted great attention due to its various optoelectronic device applications and its characteristic as two-dimensional material. The present paper reports the structural and temperature tuned optical properties of MoS2 thin films grown by RF magnetron sputtering technique. It was observed that the atomic composition ratio of Mo:S was nearly equal to 1:2 and the deposited thin films have hexagonal crystalline structure exhibiting Raman peaks around 376 and 410 cm?1. The band gap energies were determined as 1.66 and 1.71 eV at 300 and 10 K, respectively and temperature dependency of band gap energy was analyzed by means of Varshni and O'Donnell-Chen models. © 2020 Elsevier B.V.
Açıklama
Anahtar Kelimeler
Band gap energy, MoS2, Optical properties, Temperature dependency, Energy gap, Layered semiconductors, Magnetron sputtering, Molybdenum compounds, Nanocrystalline materials, Optical properties, Optoelectronic devices, Transition metals, Atomic compositions, Bandgap properties, Hexagonal crystalline, RF magnetron sputtering technique, Temperature dependencies, Temperature tuned, Transition metal dichalcogenides, Two-dimensional materials, Thin films
Kaynak
Materials Letters
WoS Q Değeri
Q2
Scopus Q Değeri
Q2
Cilt
275
