Investigation of structural and optical properties of pure ZnO and co-doped ZnO:Al:Mnx (x=1%, 2%, 3%, 5% at.) semiconductor thin films and electrical properties of produced diodes

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dc.authorscopusid57226314496
dc.authorscopusid35890569200
dc.authorscopusid56247755900
dc.contributor.authorDemirbilek, N.
dc.contributor.authorKaya, Mehmet
dc.contributor.authorYakuphanoğlu, Fahrettin
dc.date.accessioned2023-04-20T08:05:55Z
dc.date.available2023-04-20T08:05:55Z
dc.date.issued2023
dc.departmentMeslek Yüksekokulları, Çorlu Meslek Yüksekokulu, Makine ve Metal Teknolojileri Bölümü
dc.description.abstractIn this work, undoped and co-doped ZnO:Al:Mn semiconductor thin films and p-type Si diodes were produced via sol-gel technique method. The morphological and optical properties of the produced thin films were investigated using SEM, XRD and UV-Spectrophotometer, respectively. It was observed that the crystal structure of the semiconductor samples had a hexagonal wurtzite structure and the forbidden energy gaps of the samples decreased with increasing Mn contribution. The experimental zero-feed current barrier height (?b(I-V)), rectification ratio, ideality factor and Ion/Ioff parameters of the diodes were determined via the thermionic emission model. It was determined that the produced Al/p-Si/ZnO:Al:Mn/Al diode had high rectification ratio and Ion/Ioff values of 1.56x105 and 1.54x104, respectively, and exhibited light-sensitive behaviour. Also, the capacitance barrier height (?b(C-V)), built-in voltage (Vbi), diffusion potential (Vd), donor concentration (Nd) and depletion layer width (Wd) values of Al/p-Si/ZnO:Al:Mn/Al diode were calculated via the C-2-V graph drawn under 1MHz frequency. The results show that the fabricated diodes can be used as photodiodes or photosensors in optoelectronic applications. © 2023 Gazi Universitesi Muhendislik-Mimarlik. All rights reserved.
dc.description.sponsorshipFirat Üniversitesi, FU: FF16.24
dc.description.sponsorshipThis study was supported by Firat University, for PhD thesis (Project No. FF16.24).
dc.identifier.doi10.17341/gazimmfd.1001776
dc.identifier.endpage173
dc.identifier.issn1300-1884
dc.identifier.issue1en_US
dc.identifier.scopus2-s2.0-85136696710
dc.identifier.scopusqualityQ2
dc.identifier.startpage163
dc.identifier.trdizinid1159623
dc.identifier.urihttps://doi.org/10.17341/gazimmfd.1001776
dc.identifier.urihttps://hdl.handle.net/20.500.11776/11106
dc.identifier.volume38
dc.indekslendigikaynakScopus
dc.indekslendigikaynakTR-Dizin
dc.institutionauthorKaya, Mehmet
dc.language.isotr
dc.publisherGazi Universitesi
dc.relation.ispartofJournal of the Faculty of Engineering and Architecture of Gazi University
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/openAccess
dc.subjectoptical properties
dc.subjectphotodiode
dc.subjectSemiconductor
dc.subjectsol-gel
dc.subjectZnO
dc.subjectCapacitance
dc.subjectCrystal structure
dc.subjectElectric rectifiers
dc.subjectII-VI semiconductors
dc.subjectMagnetic semiconductors
dc.subjectManganese compounds
dc.subjectOptical properties
dc.subjectPhotodiodes
dc.subjectSchottky barrier diodes
dc.subjectSemiconducting zinc compounds
dc.subjectSol-gel process
dc.subjectThermionic emission
dc.subjectThin films
dc.subjectWide band gap semiconductors
dc.subjectZinc oxide
dc.subjectZinc sulfide
dc.subjectBarrier heights
dc.subjectCo-doped ZnO
dc.subjectP-type Si
dc.subjectPure co
dc.subjectPure ZnO
dc.subjectRectification ratio
dc.subjectSemiconductors thin films
dc.subjectSol'gel
dc.subjectStructural and optical properties
dc.subjectZnO:Al
dc.subjectSol-gels
dc.titleInvestigation of structural and optical properties of pure ZnO and co-doped ZnO:Al:Mnx (x=1%, 2%, 3%, 5% at.) semiconductor thin films and electrical properties of produced diodes
dc.title.alternativeSaf ZnO ve katkılı ZnO:Al:Mnx (x=1%, 2%, 3%, 5% at.) yarı iletken ince filmlerin yapısal ve optiksel özellikleri ile üretilen diyotların elektriksel özelliklerinin araştırılması
dc.typeArticle

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