Investigation of structural and optical properties of pure ZnO and co-doped ZnO:Al:Mnx (x=1%, 2%, 3%, 5% at.) semiconductor thin films and electrical properties of produced diodes
Yükleniyor...
Dosyalar
Tarih
2023
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Gazi Universitesi
Erişim Hakkı
info:eu-repo/semantics/openAccess
Özet
In this work, undoped and co-doped ZnO:Al:Mn semiconductor thin films and p-type Si diodes were produced via sol-gel technique method. The morphological and optical properties of the produced thin films were investigated using SEM, XRD and UV-Spectrophotometer, respectively. It was observed that the crystal structure of the semiconductor samples had a hexagonal wurtzite structure and the forbidden energy gaps of the samples decreased with increasing Mn contribution. The experimental zero-feed current barrier height (?b(I-V)), rectification ratio, ideality factor and Ion/Ioff parameters of the diodes were determined via the thermionic emission model. It was determined that the produced Al/p-Si/ZnO:Al:Mn/Al diode had high rectification ratio and Ion/Ioff values of 1.56x105 and 1.54x104, respectively, and exhibited light-sensitive behaviour. Also, the capacitance barrier height (?b(C-V)), built-in voltage (Vbi), diffusion potential (Vd), donor concentration (Nd) and depletion layer width (Wd) values of Al/p-Si/ZnO:Al:Mn/Al diode were calculated via the C-2-V graph drawn under 1MHz frequency. The results show that the fabricated diodes can be used as photodiodes or photosensors in optoelectronic applications. © 2023 Gazi Universitesi Muhendislik-Mimarlik. All rights reserved.
Açıklama
Anahtar Kelimeler
optical properties, photodiode, Semiconductor, sol-gel, ZnO, Capacitance, Crystal structure, Electric rectifiers, II-VI semiconductors, Magnetic semiconductors, Manganese compounds, Optical properties, Photodiodes, Schottky barrier diodes, Semiconducting zinc compounds, Sol-gel process, Thermionic emission, Thin films, Wide band gap semiconductors, Zinc oxide, Zinc sulfide, Barrier heights, Co-doped ZnO, P-type Si, Pure co, Pure ZnO, Rectification ratio, Semiconductors thin films, Sol'gel, Structural and optical properties, ZnO:Al, Sol-gels
Kaynak
Journal of the Faculty of Engineering and Architecture of Gazi University
WoS Q Değeri
Scopus Q Değeri
Q2
Cilt
38
Sayı
1
