Sneak path current equivalent circuits and reading margin analysis of complementary resistive switches based 3D stacking crossbar memories

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dc.authorid0000-0003-0030-7136
dc.authorscopusid36975765700
dc.authorscopusid36515307500
dc.authorscopusid36348997600
dc.authorwosidMutlu, Resat/ABA-5309-2020
dc.authorwosidKARAKULAK, Ertugrul/ABA-5752-2020
dc.contributor.authorKarakulak, Ertuğrul
dc.contributor.authorMutlu, Reşat
dc.contributor.authorUçar, Erdem
dc.date.accessioned2022-05-11T14:15:36Z
dc.date.available2022-05-11T14:15:36Z
dc.date.issued2014
dc.departmentFakülteler, Çorlu Mühendislik Fakültesi, Elektronik ve Haberleşme Mühendisliği Bölümü
dc.departmentMeslek Yüksekokulları, Teknik Bilimler Meslek Yüksekokulu, Elektronik ve Otomasyon Bölümü
dc.description.abstractSneak path currents of resistive memories is an important issue. They increase with increasing memory size and should be minimized for a usable resistive memory. The complementary resistive cells have been suggested as an alternative to one-cell resistive memories to decrease leakage currents. In literature, multilayer resistive memory topologies have also been inspected to minimize leakage currents. Recently, feasibility of 3D resistive RAMs is also inspected. However, to the best of our knowledge, no one has given equivalent leakage circuit models for complementary resistive switches based 3D resistive RAMs yet. In this study, equivalent leakage circuit models for different layers of a 3D resistive RAM with complementary resistive cells have been given and their leakage resistance and reading margins are compared to that of one layer crossbar memory. Some interesting and crucial results are obtained. Alternative complementary resistive switches based 3D resistive RAM topologies with insulating layer(s) for minimized leakage currents are suggested.
dc.identifier.endpage241
dc.identifier.issn0352-9045
dc.identifier.issue3en_US
dc.identifier.scopus2-s2.0-84907479208
dc.identifier.scopusqualityQ3
dc.identifier.startpage235
dc.identifier.urihttps://hdl.handle.net/20.500.11776/5984
dc.identifier.volume44
dc.identifier.wosWOS:000342172200007
dc.identifier.wosqualityQ4
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.institutionauthorMutlu, Reşat
dc.institutionauthorKarakulak, Ertuğrul
dc.language.isoen
dc.publisherSoc Microelectronics, Electron Components Materials-Midem
dc.relation.ispartofInformacije Midem-Journal of Microelectronics Electronic Components and Materials
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectComplementary Resistive Switches
dc.subject3D Multilayer Resistive RAM
dc.subjectCrossbar Memory
dc.subjectSneak Path Currents
dc.titleSneak path current equivalent circuits and reading margin analysis of complementary resistive switches based 3D stacking crossbar memories
dc.typeArticle

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