Sneak path current equivalent circuits and reading margin analysis of complementary resistive switches based 3D stacking crossbar memories
Yükleniyor...
Dosyalar
Tarih
2014
Yazarlar
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Soc Microelectronics, Electron Components Materials-Midem
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
Sneak path currents of resistive memories is an important issue. They increase with increasing memory size and should be minimized for a usable resistive memory. The complementary resistive cells have been suggested as an alternative to one-cell resistive memories to decrease leakage currents. In literature, multilayer resistive memory topologies have also been inspected to minimize leakage currents. Recently, feasibility of 3D resistive RAMs is also inspected. However, to the best of our knowledge, no one has given equivalent leakage circuit models for complementary resistive switches based 3D resistive RAMs yet. In this study, equivalent leakage circuit models for different layers of a 3D resistive RAM with complementary resistive cells have been given and their leakage resistance and reading margins are compared to that of one layer crossbar memory. Some interesting and crucial results are obtained. Alternative complementary resistive switches based 3D resistive RAM topologies with insulating layer(s) for minimized leakage currents are suggested.
Açıklama
Anahtar Kelimeler
Complementary Resistive Switches, 3D Multilayer Resistive RAM, Crossbar Memory, Sneak Path Currents
Kaynak
Informacije Midem-Journal of Microelectronics Electronic Components and Materials
WoS Q Değeri
Q4
Scopus Q Değeri
Q3
Cilt
44
Sayı
3
