Determination of current transport characteristics in Au-Cu/CuO/n-Si Schottky diodes

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dc.authorscopusid57222350312
dc.authorscopusid36766075800
dc.authorscopusid57193666915
dc.authorscopusid16023635100
dc.authorscopusid7003589218
dc.contributor.authorBayraklı Sürücü, Özge
dc.contributor.authorGüllü, Hasan Hüseyin
dc.contributor.authorTerlemezoğlu, Makbule
dc.contributor.authorYıldız, D. E.
dc.contributor.authorParlak, Mehmet
dc.date.accessioned2022-05-11T14:03:15Z
dc.date.available2022-05-11T14:03:15Z
dc.date.issued2019
dc.departmentFakülteler, Fen Edebiyat Fakültesi, Fizik Bölümü
dc.description.abstractIn this study, the material properties of CuO thin films fabricated by sputtering technique and electrical properties of CuO/n-Si structure were reported. Temperature-dependent current-voltage (I-V) measurement was carried out to determine the detail electrical characteristics of this structure. The anomaly in thermionic emission (TE) model related to barrier height inhomogeneity at the interface was obtained from the forward bias I-V analysis. The current transport mechanism at the junction was determined under the assumption of TE with Gaussian distribution of barrier height. In this analysis, standard deviation and mean zero bias barrier height were evaluated as 0.176 and 1.48 eV, respectively. Depending on the change in the diode parameters with temperature, Richardson constant was recalculated as 110.20 Acm?2K?2 with the help of modified Richardson plot. In addition, density of states at the interface were determined by using the forward bias I-V results. © 2019 Elsevier B.V.
dc.identifier.doi10.1016/j.physb.2019.06.024
dc.identifier.endpage253
dc.identifier.issn0921-4526
dc.identifier.scopus2-s2.0-85068084694
dc.identifier.scopusqualityQ2
dc.identifier.startpage246
dc.identifier.urihttps://doi.org/10.1016/j.physb.2019.06.024
dc.identifier.urihttps://hdl.handle.net/20.500.11776/4653
dc.identifier.volume570
dc.identifier.wosWOS:000481733800040
dc.identifier.wosqualityQ3
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.institutionauthorTerlemezoğlu, Makbule
dc.language.isoen
dc.publisherElsevier B.V.
dc.relation.ispartofPhysica B: Condensed Matter
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectGaussian distribution
dc.subjectSchottky diode
dc.subjectThin film
dc.subjectTransport mechanism
dc.subjectCopper oxides
dc.subjectDiodes
dc.subjectGaussian distribution
dc.subjectInterface states
dc.subjectSchottky barrier diodes
dc.subjectThermionic emission
dc.subjectThin films
dc.subjectBarrier height inhomogeneity
dc.subjectCurrent transport mechanism
dc.subjectCurrent-voltage measurements
dc.subjectElectrical characteristic
dc.subjectSchottky diodes
dc.subjectSputtering techniques
dc.subjectTemperature dependent
dc.subjectTransport mechanism
dc.subjectSilicon compounds
dc.titleDetermination of current transport characteristics in Au-Cu/CuO/n-Si Schottky diodes
dc.typeArticle

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