Determination of current transport characteristics in Au-Cu/CuO/n-Si Schottky diodes
Yükleniyor...
Dosyalar
Tarih
2019
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Elsevier B.V.
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
In this study, the material properties of CuO thin films fabricated by sputtering technique and electrical properties of CuO/n-Si structure were reported. Temperature-dependent current-voltage (I-V) measurement was carried out to determine the detail electrical characteristics of this structure. The anomaly in thermionic emission (TE) model related to barrier height inhomogeneity at the interface was obtained from the forward bias I-V analysis. The current transport mechanism at the junction was determined under the assumption of TE with Gaussian distribution of barrier height. In this analysis, standard deviation and mean zero bias barrier height were evaluated as 0.176 and 1.48 eV, respectively. Depending on the change in the diode parameters with temperature, Richardson constant was recalculated as 110.20 Acm?2K?2 with the help of modified Richardson plot. In addition, density of states at the interface were determined by using the forward bias I-V results. © 2019 Elsevier B.V.
Açıklama
Anahtar Kelimeler
Gaussian distribution, Schottky diode, Thin film, Transport mechanism, Copper oxides, Diodes, Gaussian distribution, Interface states, Schottky barrier diodes, Thermionic emission, Thin films, Barrier height inhomogeneity, Current transport mechanism, Current-voltage measurements, Electrical characteristic, Schottky diodes, Sputtering techniques, Temperature dependent, Transport mechanism, Silicon compounds
Kaynak
Physica B: Condensed Matter
WoS Q Değeri
Q3
Scopus Q Değeri
Q2
Cilt
570
