Investigation of structural and electrical properties of flat a-Si/c-Si heterostructure fabricated by EBPVD technique

Basit Öğe Kaydı
dc.authorscopusid57200995971
dc.authorscopusid18042707800
dc.authorscopusid6506767312
dc.authorscopusid7003971869
dc.contributor.authorDemiroğlu, Dilek
dc.contributor.authorTatar, Beyhan
dc.contributor.authorKazmanli, K.
dc.contributor.authorÜrgen, Mustafa
dc.date.accessioned2022-05-11T14:29:30Z
dc.date.available2022-05-11T14:29:30Z
dc.date.issued2013
dc.departmentFakülteler, Fen Edebiyat Fakültesi, Fizik Bölümü
dc.descriptionDoga Nanobiotech Inc.;Mega Technology Services Inc.
dc.description3rd International Advances in Applied Physics and Materials Science Congress, APMAS 2013 -- 24 April 2013 through 28 April 2013 -- -- 111830
dc.description.abstractFlat amorphous silicon - crystal silicon (a-Si/c-Si) heterostructure were prepared by ultra-high vacuum electron beam evaporation technique on p-Si (111) and n-Si (100) single crystal substrates. Structural analyses were investigated by XRD, Raman and FEG-SEM analysis. With these analyses we determined that at the least amorphous structure shows modification but amorphous structure just protected. The electrical and photovoltaic properties of flat a-Si/c-Si heterojunction devices were investigated with current-voltage characteristics under dark and illumination conditions. Electrical properties of flat a-Si/c-Si heterorojunction; such as barrier height ? B , diode ideality factor ? were determined from current-voltage characteristics in dark conditions. These a-Si/c-Si heterostructure have good rectification behavior as a diode and exhibit high photovoltaic sensitivity. © 2013 AIP Publishing LLC.
dc.identifier.doi10.1063/1.4849249
dc.identifier.endpage161
dc.identifier.isbn978-0735411975
dc.identifier.issn0094-243X
dc.identifier.scopus2-s2.0-84942855737
dc.identifier.scopusqualityN/A
dc.identifier.startpage158
dc.identifier.urihttps://doi.org/10.1063/1.4849249
dc.identifier.urihttps://hdl.handle.net/20.500.11776/7005
dc.identifier.volume1569
dc.indekslendigikaynakScopus
dc.institutionauthorTatar, Beyhan
dc.language.isoen
dc.publisherAmerican Institute of Physics Inc.
dc.relation.ispartofAIP Conference Proceedings
dc.relation.publicationcategoryKonferans Öğesi - Uluslararası - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectAmorphous silicon
dc.subjecte-beam evaporation technique
dc.subjectelectrical properties
dc.titleInvestigation of structural and electrical properties of flat a-Si/c-Si heterostructure fabricated by EBPVD technique
dc.typeConference Object

Dosyalar

Orijinal paket
Listeleniyor 1 - 1 / 1
Küçük Resim Yok
İsim:
7005.pdf
Boyut:
1011.1 KB
Biçim:
Adobe Portable Document Format
Açıklama:
Tam Metin / Full Text
İndir

Koleksiyon

Scopus İndeksli Yayınlar Koleksiyonu
Fen Edebiyat Fakültesi Koleksiyonu