Investigation of structural and electrical properties of flat a-Si/c-Si heterostructure fabricated by EBPVD technique
Yükleniyor...
Dosyalar
Tarih
2013
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
American Institute of Physics Inc.
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
Flat amorphous silicon - crystal silicon (a-Si/c-Si) heterostructure were prepared by ultra-high vacuum electron beam evaporation technique on p-Si (111) and n-Si (100) single crystal substrates. Structural analyses were investigated by XRD, Raman and FEG-SEM analysis. With these analyses we determined that at the least amorphous structure shows modification but amorphous structure just protected. The electrical and photovoltaic properties of flat a-Si/c-Si heterojunction devices were investigated with current-voltage characteristics under dark and illumination conditions. Electrical properties of flat a-Si/c-Si heterorojunction; such as barrier height ? B , diode ideality factor ? were determined from current-voltage characteristics in dark conditions. These a-Si/c-Si heterostructure have good rectification behavior as a diode and exhibit high photovoltaic sensitivity. © 2013 AIP Publishing LLC.
Açıklama
Doga Nanobiotech Inc.;Mega Technology Services Inc.
3rd International Advances in Applied Physics and Materials Science Congress, APMAS 2013 -- 24 April 2013 through 28 April 2013 -- -- 111830
3rd International Advances in Applied Physics and Materials Science Congress, APMAS 2013 -- 24 April 2013 through 28 April 2013 -- -- 111830
Anahtar Kelimeler
Amorphous silicon, e-beam evaporation technique, electrical properties
Kaynak
AIP Conference Proceedings
WoS Q Değeri
Scopus Q Değeri
N/A
Cilt
1569
