Improvement in electrical and photovoltaic properties of a-Si/c-Si heterojunction with slanted nano-columnar amorphous silicon thin films for photovoltaic applications

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dc.authorid0000-0003-3549-0049
dc.authorid0000-0003-3463-2009
dc.authorscopusid18042707800
dc.authorscopusid55613591800
dc.authorscopusid6506767312
dc.authorscopusid7003971869
dc.authorwosidUrgen, Mustafa/D-5422-2014
dc.authorwosidTatar, Beyhan/ABA-6195-2020
dc.contributor.authorTatar, Beyhan
dc.contributor.authorDemiroğlu, Dilek
dc.contributor.authorKazmanlı, K.
dc.contributor.authorÜrgen, Mustafa
dc.date.accessioned2022-05-11T14:29:31Z
dc.date.available2022-05-11T14:29:31Z
dc.date.issued2015
dc.departmentFakülteler, Fen Edebiyat Fakültesi, Fizik Bölümü
dc.description.abstractThe flat a-Si and slanted nanocolumnar (S-nC) a-Si thin films were prepared on c-Si and corning glass substrates by e-beam physical vapor deposition (EB-PVD) technique. The structural properties of all the grown thin films were determined by X-Ray Diffraction (XRD) analysis and Raman spectroscopy. Surface and cross-sectional morphology of a-Si/c-Si and S-nC a-Si/c-Si heterojunctions were investigated by Field Emission Scanning Electron Microscopy (FE-SEM). Sculptured thin films demonstrate potential for significant nanoscale applications in the area of thin film technology. The electrical and photovoltaic properties of these heterojunctions have been investigated by means of dc currentevoltage (IeV) measurements at room temperature in dark and light conditions. The S-nC STFs' performance has been found to be improvable on changing the morphology of the thin film. We have found that, the porous morphology of this structure improves the photosensitivity features in photovoltaic devices and solar cell technology. We gained a high open voltage value, such as 900 mV in S-nC a-Si/c-Si thin film, without any doping process. (C) 2015 Elsevier B.V. All rights reserved.
dc.description.sponsorshipTUBITAK The Scientific and Technological Research Council of Turkey Engineering Research GroupTurkiye Bilimsel ve Teknolojik Arastirma Kurumu (TUBITAK) [112M319]
dc.description.sponsorshipThis work was carried out with the support of TUBITAK The Scientific and Technological Research Council of Turkey Engineering Research Group (Project No: 112M319). Author is thankful to The Scientific and Technological Research Council of Turkey.
dc.identifier.doi10.1016/j.cap.2015.02.007
dc.identifier.endpage519
dc.identifier.issn1567-1739
dc.identifier.issn1878-1675
dc.identifier.issue4en_US
dc.identifier.scopus2-s2.0-84922496240
dc.identifier.scopusqualityQ2
dc.identifier.startpage511
dc.identifier.urihttps://doi.org/10.1016/j.cap.2015.02.007
dc.identifier.urihttps://hdl.handle.net/20.500.11776/7017
dc.identifier.volume15
dc.identifier.wosWOS:000350582900015
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.institutionauthorTatar, Beyhan
dc.language.isoen
dc.publisherElsevier Science Bv
dc.relation.ispartofCurrent Applied Physics
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectSlanted nanocolumnar thin films
dc.subjectAmorphous silicon
dc.subjecta-Si/c-Si heterojunctions
dc.subjectPhotovoltaic properties
dc.subjectGlancing Angle Deposition
dc.subjectLiquid-Phase Epitaxy
dc.subjectSolar-Cells
dc.subjectCrystalline Silicon
dc.subjectFabrication
dc.subjectSurface
dc.subjectTemperature
dc.subjectGrowth
dc.titleImprovement in electrical and photovoltaic properties of a-Si/c-Si heterojunction with slanted nano-columnar amorphous silicon thin films for photovoltaic applications
dc.typeArticle

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