Improvement in electrical and photovoltaic properties of a-Si/c-Si heterojunction with slanted nano-columnar amorphous silicon thin films for photovoltaic applications
Yükleniyor...
Dosyalar
Tarih
2015
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Elsevier Science Bv
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
The flat a-Si and slanted nanocolumnar (S-nC) a-Si thin films were prepared on c-Si and corning glass substrates by e-beam physical vapor deposition (EB-PVD) technique. The structural properties of all the grown thin films were determined by X-Ray Diffraction (XRD) analysis and Raman spectroscopy. Surface and cross-sectional morphology of a-Si/c-Si and S-nC a-Si/c-Si heterojunctions were investigated by Field Emission Scanning Electron Microscopy (FE-SEM). Sculptured thin films demonstrate potential for significant nanoscale applications in the area of thin film technology. The electrical and photovoltaic properties of these heterojunctions have been investigated by means of dc currentevoltage (IeV) measurements at room temperature in dark and light conditions. The S-nC STFs' performance has been found to be improvable on changing the morphology of the thin film. We have found that, the porous morphology of this structure improves the photosensitivity features in photovoltaic devices and solar cell technology. We gained a high open voltage value, such as 900 mV in S-nC a-Si/c-Si thin film, without any doping process. (C) 2015 Elsevier B.V. All rights reserved.
Açıklama
Anahtar Kelimeler
Slanted nanocolumnar thin films, Amorphous silicon, a-Si/c-Si heterojunctions, Photovoltaic properties, Glancing Angle Deposition, Liquid-Phase Epitaxy, Solar-Cells, Crystalline Silicon, Fabrication, Surface, Temperature, Growth
Kaynak
Current Applied Physics
WoS Q Değeri
Q2
Scopus Q Değeri
Q2
Cilt
15
Sayı
4
