Temperature dependent band gap in SnS2xSe(2-2x) (x = 0.5) thin films

dc.authorscopusid55751932500
dc.authorscopusid23766993100
dc.authorscopusid36766075800
dc.authorscopusid57193666915
dc.authorscopusid55660608000
dc.authorscopusid35580905900
dc.authorscopusid7003589218
dc.contributor.authorDelice, S.
dc.contributor.authorIşık, M.
dc.contributor.authorGüllü, H. H.
dc.contributor.authorTerlemezoğlu, Makbule
dc.contributor.authorSurucu, O.B.
dc.contributor.authorGasanly, Nizami Mamed
dc.contributor.authorParlak, Mehmet
dc.date.accessioned2022-05-11T14:03:18Z
dc.date.available2022-05-11T14:03:18Z
dc.date.issued2020
dc.departmentFakülteler, Fen Edebiyat Fakültesi, Fizik Bölümü
dc.description.abstractStructural and optical properties of SnS2xSe(2-2x) thin films grown by magnetron sputtering method were investigated for composition of x = 0.5 (SnSSe) in the present study. X-ray diffraction, energy dispersive X-ray spectroscopy, atomic force microscopy and scanning electron microscopy methods were used for structural characterization while temperature-dependent transmission measurements carried out at various temperatures in between 10 and 300 K were accomplished for optical investigations. X-ray diffraction pattern of studied composition presented peaks at positions which are between those of SnSe2 and SnS2. Transmittance spectra recorded at all applied temperatures were analyzed using well-known Tauc relation. Analyses revealed the direct band gap energy value of SnSSe thin films as 1.75 eV at room temperature. Change of band gap energy as a response to varying temperature were discussed in the study by utilizing Varshni relation. It was shown that variation of gap energy values was well-matched with the Varshni's empirical formula. Energy band gap at absolute zero and rate of change of band gap with temperature were found to be 1.783 eV and ?2.1 × 10?4 eV K?1, respectively. © 2020 Elsevier Ltd
dc.identifier.doi10.1016/j.mssp.2020.105083
dc.identifier.issn1369-8001
dc.identifier.scopus2-s2.0-85082121091
dc.identifier.scopusqualityQ1
dc.identifier.urihttps://doi.org/10.1016/j.mssp.2020.105083
dc.identifier.urihttps://hdl.handle.net/20.500.11776/4665
dc.identifier.volume114
dc.identifier.wosWOS:000535462600016
dc.identifier.wosqualityQ1
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.institutionauthorTerlemezoğlu, Makbule
dc.language.isoen
dc.publisherElsevier Ltd
dc.relation.ispartofMaterials Science in Semiconductor Processing
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectOptical properties
dc.subjectSnS2
dc.subjectSnSe2
dc.subjectThin films
dc.subjectEnergy dispersive spectroscopy
dc.subjectEnergy gap
dc.subjectIV-VI semiconductors
dc.subjectOptical properties
dc.subjectScanning electron microscopy
dc.subjectSelenium compounds
dc.subjectSemiconducting tin compounds
dc.subjectThin films
dc.subjectTin compounds
dc.subjectX ray diffraction
dc.subjectEnergy dispersive X ray spectroscopy
dc.subjectMagnetron sputtering method
dc.subjectSnS2
dc.subjectSnSe2
dc.subjectStructural and optical properties
dc.subjectStructural characterization
dc.subjectTransmission measurements
dc.subjectTransmittance spectra
dc.subjectSulfur compounds
dc.titleTemperature dependent band gap in SnS2xSe(2-2x) (x = 0.5) thin films
dc.typeArticle

Dosyalar

Orijinal paket
Listeleniyor 1 - 1 / 1
Küçük Resim Yok
İsim:
4665.pdf
Boyut:
1.09 MB
Biçim:
Adobe Portable Document Format
Açıklama:
Tam Metin / Full Text