Temperature dependent band gap in SnS2xSe(2-2x) (x = 0.5) thin films
dc.authorscopusid | 55751932500 | |
dc.authorscopusid | 23766993100 | |
dc.authorscopusid | 36766075800 | |
dc.authorscopusid | 57193666915 | |
dc.authorscopusid | 55660608000 | |
dc.authorscopusid | 35580905900 | |
dc.authorscopusid | 7003589218 | |
dc.contributor.author | Delice, S. | |
dc.contributor.author | Işık, M. | |
dc.contributor.author | Güllü, H. H. | |
dc.contributor.author | Terlemezoğlu, Makbule | |
dc.contributor.author | Surucu, O.B. | |
dc.contributor.author | Gasanly, Nizami Mamed | |
dc.contributor.author | Parlak, Mehmet | |
dc.date.accessioned | 2022-05-11T14:03:18Z | |
dc.date.available | 2022-05-11T14:03:18Z | |
dc.date.issued | 2020 | |
dc.department | Fakülteler, Fen Edebiyat Fakültesi, Fizik Bölümü | |
dc.description.abstract | Structural and optical properties of SnS2xSe(2-2x) thin films grown by magnetron sputtering method were investigated for composition of x = 0.5 (SnSSe) in the present study. X-ray diffraction, energy dispersive X-ray spectroscopy, atomic force microscopy and scanning electron microscopy methods were used for structural characterization while temperature-dependent transmission measurements carried out at various temperatures in between 10 and 300 K were accomplished for optical investigations. X-ray diffraction pattern of studied composition presented peaks at positions which are between those of SnSe2 and SnS2. Transmittance spectra recorded at all applied temperatures were analyzed using well-known Tauc relation. Analyses revealed the direct band gap energy value of SnSSe thin films as 1.75 eV at room temperature. Change of band gap energy as a response to varying temperature were discussed in the study by utilizing Varshni relation. It was shown that variation of gap energy values was well-matched with the Varshni's empirical formula. Energy band gap at absolute zero and rate of change of band gap with temperature were found to be 1.783 eV and ?2.1 × 10?4 eV K?1, respectively. © 2020 Elsevier Ltd | |
dc.identifier.doi | 10.1016/j.mssp.2020.105083 | |
dc.identifier.issn | 1369-8001 | |
dc.identifier.scopus | 2-s2.0-85082121091 | |
dc.identifier.scopusquality | Q1 | |
dc.identifier.uri | https://doi.org/10.1016/j.mssp.2020.105083 | |
dc.identifier.uri | https://hdl.handle.net/20.500.11776/4665 | |
dc.identifier.volume | 114 | |
dc.identifier.wos | WOS:000535462600016 | |
dc.identifier.wosquality | Q1 | |
dc.indekslendigikaynak | Web of Science | |
dc.indekslendigikaynak | Scopus | |
dc.institutionauthor | Terlemezoğlu, Makbule | |
dc.language.iso | en | |
dc.publisher | Elsevier Ltd | |
dc.relation.ispartof | Materials Science in Semiconductor Processing | |
dc.relation.publicationcategory | Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı | en_US |
dc.rights | info:eu-repo/semantics/closedAccess | |
dc.subject | Optical properties | |
dc.subject | SnS2 | |
dc.subject | SnSe2 | |
dc.subject | Thin films | |
dc.subject | Energy dispersive spectroscopy | |
dc.subject | Energy gap | |
dc.subject | IV-VI semiconductors | |
dc.subject | Optical properties | |
dc.subject | Scanning electron microscopy | |
dc.subject | Selenium compounds | |
dc.subject | Semiconducting tin compounds | |
dc.subject | Thin films | |
dc.subject | Tin compounds | |
dc.subject | X ray diffraction | |
dc.subject | Energy dispersive X ray spectroscopy | |
dc.subject | Magnetron sputtering method | |
dc.subject | SnS2 | |
dc.subject | SnSe2 | |
dc.subject | Structural and optical properties | |
dc.subject | Structural characterization | |
dc.subject | Transmission measurements | |
dc.subject | Transmittance spectra | |
dc.subject | Sulfur compounds | |
dc.title | Temperature dependent band gap in SnS2xSe(2-2x) (x = 0.5) thin films | |
dc.type | Article |
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