Temperature dependent band gap in SnS2xSe(2-2x) (x = 0.5) thin films
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Dosyalar
Tarih
2020
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Elsevier Ltd
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
Structural and optical properties of SnS2xSe(2-2x) thin films grown by magnetron sputtering method were investigated for composition of x = 0.5 (SnSSe) in the present study. X-ray diffraction, energy dispersive X-ray spectroscopy, atomic force microscopy and scanning electron microscopy methods were used for structural characterization while temperature-dependent transmission measurements carried out at various temperatures in between 10 and 300 K were accomplished for optical investigations. X-ray diffraction pattern of studied composition presented peaks at positions which are between those of SnSe2 and SnS2. Transmittance spectra recorded at all applied temperatures were analyzed using well-known Tauc relation. Analyses revealed the direct band gap energy value of SnSSe thin films as 1.75 eV at room temperature. Change of band gap energy as a response to varying temperature were discussed in the study by utilizing Varshni relation. It was shown that variation of gap energy values was well-matched with the Varshni's empirical formula. Energy band gap at absolute zero and rate of change of band gap with temperature were found to be 1.783 eV and ?2.1 × 10?4 eV K?1, respectively. © 2020 Elsevier Ltd
Açıklama
Anahtar Kelimeler
Optical properties, SnS2, SnSe2, Thin films, Energy dispersive spectroscopy, Energy gap, IV-VI semiconductors, Optical properties, Scanning electron microscopy, Selenium compounds, Semiconducting tin compounds, Thin films, Tin compounds, X ray diffraction, Energy dispersive X ray spectroscopy, Magnetron sputtering method, SnS2, SnSe2, Structural and optical properties, Structural characterization, Transmission measurements, Transmittance spectra, Sulfur compounds
Kaynak
Materials Science in Semiconductor Processing
WoS Q Değeri
Q1
Scopus Q Değeri
Q1
Cilt
114
