Low temperature crystallization of amorphous silicon by gold nanoparticle

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dc.authorid0000-0002-3810-9402
dc.authorscopusid56898663700
dc.authorscopusid57200807730
dc.authorscopusid55631459400
dc.authorscopusid18036952100
dc.authorscopusid8307543400
dc.authorwosidTuran, Rasit/ABB-4627-2020
dc.authorwosidERTÜRK, KADİR/ABA-5148-2020
dc.authorwosidSedani, Salar H./ABA-4612-2020
dc.contributor.authorKaraman, M.
dc.contributor.authorAydın, M.
dc.contributor.authorSedani, S. H.
dc.contributor.authorErtürk, Kadir
dc.contributor.authorTuran, R.
dc.date.accessioned2022-05-11T14:29:30Z
dc.date.available2022-05-11T14:29:30Z
dc.date.issued2013
dc.departmentFakülteler, Fen Edebiyat Fakültesi, Fizik Bölümü
dc.description.abstractSingle crystalline Si thin film fabricated on glass substrate by a process called Solid Phase Crystallization (SPC) is highly desirable for the development of high efficiency and low cost thin film solar cells. However, the use of ordinary soda lime glass requires process temperatures higher than 600 degrees C. Crystallization of Si film at around this temperature takes place in extremely long time exceeding 20 h in most cases. In order to reduce this long process time, new crystallization techniques such as Metal Induced Crystallization (MIC) using thin metal films as a catalyst layer is attracting much attention. Instead of using continuous metal films, the use of metal nanoparticles offers some advantages. In this work, gold thin films were deposited on aluminum doped zinc oxide (AZO) coated glass and then annealed for nanoparticle formation. Amorphous silicon was then deposited by e-beam evaporation onto metal nanoparticles. Silicon films were annealed for crystallization at different temperatures between 500 degrees C and 600 degrees C. We showed that the crystallization occurs at lower temperatures and with higher rates with the inclusion of gold nanoparticles (AuNP). Raman and XRD results indicate that the crystallization starts at temperatures as low as 500 degrees C and an annealing at 600 degrees C for a short process time provides sufficiently good crystallinity. (c) 2013 Elsevier B.V. All rights reserved.
dc.description.sponsorshipTUBITAK programmeTurkiye Bilimsel ve Teknolojik Arastirma Kurumu (TUBITAK) [2218]; ODTU DOSAPMiddle East Technical University
dc.description.sponsorshipThis work was supported by TUBITAK 2218 programme and ODTU DOSAP. Authors would like to thank Dr. M. Kulakci and E. Ozkol for their contribution at this research.
dc.identifier.doi10.1016/j.mee.2013.02.075
dc.identifier.endpage115
dc.identifier.issn0167-9317
dc.identifier.issn1873-5568
dc.identifier.scopus2-s2.0-84904406721
dc.identifier.scopusqualityQ2
dc.identifier.startpage112
dc.identifier.urihttps://doi.org/10.1016/j.mee.2013.02.075
dc.identifier.urihttps://hdl.handle.net/20.500.11776/7006
dc.identifier.volume108
dc.identifier.wosWOS:000321423200022
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.institutionauthorAydın, M.
dc.institutionauthorErtürk, Kadir
dc.language.isoen
dc.publisherElsevier
dc.relation.ispartofMicroelectronic Engineering
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectGold nanoparticle
dc.subjectAmorphous silicon
dc.subjectCrystallization
dc.subjectElectron beam evaporation
dc.subjectMetal-Induced Crystallization
dc.subjectSi
dc.subjectGrowth
dc.subjectFilms
dc.titleLow temperature crystallization of amorphous silicon by gold nanoparticle
dc.typeArticle

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