Fabrication of CdSeXTe1-x thin films by sequential growth using double sources

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dc.authorscopusid13907034500
dc.authorscopusid36766075800
dc.authorscopusid57193666915
dc.authorscopusid7003589218
dc.contributor.authorDemir, M.
dc.contributor.authorGüllü, H. H.
dc.contributor.authorTerlemezoğlu, Makbule
dc.contributor.authorParlak, Mehmet
dc.date.accessioned2022-05-11T14:29:35Z
dc.date.available2022-05-11T14:29:35Z
dc.date.issued2021
dc.departmentFakülteler, Fen Edebiyat Fakültesi, Fizik Bölümü
dc.description.abstractCdSexTe(1-x) (CST) ternary thin films were fabricated by stacking thermally evaporated CdSe and electron beam evaporated CdTe layers. The final structure was achieved in a stoichiometric form of approximately Cd:Se:Te = 50:25:25. The post-annealing processes at 300, 400, and 450 degrees C were applied to trigger the compound formation of CST thin films. The X-ray diffraction (XRD) profiles revealed that CdTe and CdSe have major peaks at 23.9 degrees and 25.5 degrees corresponds to (111) direction in cubic zinc-blend structure. Raman modes of CdTe were observed at 140 and 168 cm(-1), while Raman modes of CdSe films were detected at 208 and 417 cm(-1). The post-annealing process was found to be an effective method in order to combine both diffraction peaks and the vibrational modes of CdTe and CdSe, consequently to form CST ternary alloy. Transmission spectroscopy analysis revealed that CST films have direct band gap value of 1.6 eV.
dc.description.sponsorship[TUBITAK-3001]; [118F317]
dc.description.sponsorshipThis work was financed by TUBITAK-3001 project under Grant No.118F317.
dc.identifier.doi10.1016/j.physb.2021.413232
dc.identifier.issn0921-4526
dc.identifier.issn1873-2135
dc.identifier.scopus2-s2.0-85109209586
dc.identifier.scopusqualityQ2
dc.identifier.urihttps://doi.org/10.1016/j.physb.2021.413232
dc.identifier.urihttps://hdl.handle.net/20.500.11776/7047
dc.identifier.volume619
dc.identifier.wosWOS:000687253200001
dc.identifier.wosqualityQ3
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.institutionauthorTerlemezoğlu, Makbule
dc.language.isoen
dc.publisherElsevier
dc.relation.ispartofPhysica B-Condensed Matter
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectCdSexTe1-x
dc.subjectThin film
dc.subjectEvaporation
dc.subjectAnnealing
dc.titleFabrication of CdSeXTe1-x thin films by sequential growth using double sources
dc.typeArticle

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