Excess Capacitance Due to Minority Carrier Injection in CrSi2/p-Type Crystalline Si Isotype Junction

Basit Öğe Kaydı
dc.authorid0000-0003-3549-0049
dc.authorid0000-0002-7733-8929
dc.authorid0000-0003-3463-2009
dc.authorscopusid36818588600
dc.authorscopusid7003273267
dc.authorscopusid18042707800
dc.authorscopusid7003971869
dc.authorscopusid18042118900
dc.authorwosidTatar, Beyhan/ABA-6195-2020
dc.authorwosidUrgen, Mustafa/D-5422-2014
dc.contributor.authorÖzdemir, Orhan
dc.contributor.authorYılmazer, Deneb
dc.contributor.authorTatar, Beyhan
dc.contributor.authorÜrgen, Mustafa
dc.contributor.authorKutlu, Kubilay
dc.date.accessioned2022-05-11T14:29:29Z
dc.date.available2022-05-11T14:29:29Z
dc.date.issued2010
dc.departmentFakülteler, Fen Edebiyat Fakültesi, Fizik Bölümü
dc.description.abstractExcess current and capacitance phenonema were observed for the first time on a CrSi2/p-type crystalline silicon junction produced by cathodic arc physical vapor deposition. The heterojunction was investigated by current-voltage-temperature (I-V-T) and capacitance (conductance)-voltage/temperature (C, G-V/T) measurements for the purpose of studying transport and storage features. Excess current, manifested as a crossover at a large forward bias, was observed in I-V-T curves since minority carriers injected into the quasi-neutral region of p-c-Si were neutralized by majority carriers supplied from the p-c-Si semiconductor side. This phenomenon, known as conductivity modulation, appeared distinctly as a hump in C-V/T curves (storage property); a sharp rise in capacitance towards a maximum value as forward bias increased and the subsequent fall after a specific value. For reverse and low forward bias regions, where minority carrier injection was negligible, geometrical junction capacitance and a shoulder in C-V/T curves were observed. In the voltage range where the peak was observed in C-V/T measurements, trap-assisted tunneling recombination generation and space-charge-limited current (SCLC) mechanisms were determined in the CrSi2/p-c-Si isotype junction. Traps introduced during tunneling were identified as bulk point defects due to the chromium-boron (Cr-B) complex for the CrSi2/p-c-Si junction on the Si side by I-V-T and C(G)-T analyses. This finding seemed to be in agreement with a recent DLTS [Deep Level Transient Spectroscopy] measurement in terms of both energy depth (0.26 eV) and bulk nature. Finally, the shoulder in C-V/T curves indicated Cr-B point defects in the measurement. (C) 2010 The Japan Society of Applied Physics
dc.identifier.issn0021-4922
dc.identifier.issn1347-4065
dc.identifier.issue9en_US
dc.identifier.scopus2-s2.0-78049377615
dc.identifier.scopusqualityQ2
dc.identifier.urihttps://hdl.handle.net/20.500.11776/6995
dc.identifier.volume49
dc.identifier.wosWOS:000282136400017
dc.identifier.wosqualityQ3
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.institutionauthorTatar, Beyhan
dc.language.isoen
dc.publisherIop Publishing Ltd
dc.relation.ispartofJapanese Journal of Applied Physics
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.titleExcess Capacitance Due to Minority Carrier Injection in CrSi2/p-Type Crystalline Si Isotype Junction
dc.typeArticle

Dosyalar

Orijinal paket
Listeleniyor 1 - 1 / 1
Küçük Resim Yok
İsim:
6995.pdf
Boyut:
1002.87 KB
Biçim:
Adobe Portable Document Format
Açıklama:
Tam Metin / Full Text
İndir

Koleksiyon

WoS İndeksli Yayınlar Koleksiyonu
Fen Edebiyat Fakültesi Koleksiyonu
Scopus İndeksli Yayınlar Koleksiyonu