Deposition of CZTSe thin films and illumination effects on the device properties of Ag/n-Si/p-CZTSe/In heterostructure

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dc.authorid0000-0001-7912-0176
dc.authorid0000-0001-9542-5121
dc.authorid0000-0002-8478-1267
dc.authorid0000-0001-8541-5309
dc.authorscopusid55660608000
dc.authorscopusid57193666915
dc.authorscopusid36766075800
dc.authorscopusid7003589218
dc.authorwosidTerlemezoglu, Makbule/ABA-5010-2020
dc.authorwosidparlak, mehmet/ABB-8651-2020
dc.authorwosidGULLU, HASAN HUSEYIN/F-7486-2019
dc.authorwosidSURUCU, Ozge/ABA-4839-2020
dc.contributor.authorBayraklı Sürücü, Özge
dc.contributor.authorTerlemezoğlu, Makbule
dc.contributor.authorGüllü, H. H.
dc.contributor.authorParlak, Mehmet
dc.date.accessioned2022-05-11T14:29:32Z
dc.date.available2022-05-11T14:29:32Z
dc.date.issued2017
dc.departmentFakülteler, Fen Edebiyat Fakültesi, Fizik Bölümü
dc.description.abstractCharacterization of Cu2ZnSnSe4 (CZTSe) thin films deposited by thermal evaporation sequentially from the pure elemental sources and in-situ post annealing was carried out at 400 C under Se evaporation atmosphere. Another annealing process was applied in nitrogen atmosphere at 450 degrees C to get poly-crystalline monophase CZTSe film structure. XRD analysis together with Raman spectroscopy was used to determine the structural properties. Spectral optical absorption coefficient evaluated from transmission data showed the band gap value of 1.49 eV for annealed film. Electrical measurements indicated that CZTSe thin films have p-type semiconductor behavior with the carrier density and mobility values of 10(-19) cm(-3) and 0.70 cm(2)/(V.s). Illumination effects on the device properties of Ag/n-Si/p-CZTSe/In heterostructure were investigated by analyzing current-voltage(I-V) and frequency dependent capacitance-voltage(C-V) data. Under the illumination, Ag/n-Si/p-CZTSe/In heterostructure showed photodiode behavior having V-oc value of 100 mV and I-sc value of 27.5 mu A. With the illumination, series resistances (R-s), diode ideality factor (n) and barrier height (Phi(b)) decreased and shunt resistance (R-sh) increased. Capacitance value at lower frequency decreased due to the illumination effect. (C) 2017 Elsevier B.V. All rights reserved.
dc.identifier.doi10.1016/j.jallcom.2017.03.163
dc.identifier.endpage343
dc.identifier.issn0925-8388
dc.identifier.issn1873-4669
dc.identifier.scopus2-s2.0-85015647304
dc.identifier.scopusqualityQ1
dc.identifier.startpage337
dc.identifier.urihttps://doi.org/10.1016/j.jallcom.2017.03.163
dc.identifier.urihttps://hdl.handle.net/20.500.11776/7028
dc.identifier.volume709
dc.identifier.wosWOS:000401042300042
dc.identifier.wosqualityQ1
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.institutionauthorTerlemezoğlu, Makbule
dc.language.isoen
dc.publisherElsevier Science Sa
dc.relation.ispartofJournal of Alloys and Compounds
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectThin film
dc.subjectThermal evaporation
dc.subjectKesterite
dc.subjectHeterostructure
dc.subjectTransmission
dc.subjectSecondary Phase-Formation
dc.subjectSolar-Cell Performance
dc.subjectCu2znsns4
dc.subjectPrecursors
dc.subjectSelenization
dc.subjectTemperature
dc.subjectZn
dc.subjectParameters
dc.subjectIntensity
dc.subjectDiodes
dc.titleDeposition of CZTSe thin films and illumination effects on the device properties of Ag/n-Si/p-CZTSe/In heterostructure
dc.typeArticle

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