Structure and photovoltaic properties of Ag/p-CuPc/a-Si/c-Si/Ag organic-inorganic hybrid heterojunction fabricated by chemical spray pyrolysis technique

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dc.authorid0000-0003-3549-0049
dc.authorid0000-0003-3463-2009
dc.authorscopusid18042707800
dc.authorscopusid55613591800
dc.authorscopusid7003971869
dc.authorwosidUrgen, Mustafa/D-5422-2014
dc.authorwosidTatar, Beyhan/ABA-6195-2020
dc.contributor.authorTatar, Beyhan
dc.contributor.authorDemiroğlu, Dilek
dc.contributor.authorÜrgen, Mustafa
dc.date.accessioned2022-05-11T14:29:30Z
dc.date.available2022-05-11T14:29:30Z
dc.date.issued2013
dc.departmentFakülteler, Fen Edebiyat Fakültesi, Fizik Bölümü
dc.description.abstractThis investigation refers to the fabrication of an organic-inorganic hybrid heterojunction photovoltaic device. Heterojunctions PV devices were fabricated by growing p-type organic CuPc films onto inorganic amorphous silicon substrates using chemical spray pyrolysis technique. The structural and morphological properties of the amorphous silicon thin films and CuPc thin films were investigated by XRD, RAMAN and FEG-SEM analysis. The XRD pattern indicated that the films were polycrystalline in nature of CuPc thin films that crystallized in the orthorhombic alpha-phase structure. We determined 17 Raman active peaks belong to CuPc thin films and our results are compatible with polarized Raman spectra. We have characterized the electrical and photovoltaic properties of Ag/p-CuPc/a-Si/c-Si/Ag heterojunction devices. The measured electrical parameters were used to determine the conduction mechanisms of these heterojunctions. Electrical parameters such as barrier height Phi(B), diode ideality factor eta, series resistance R-s and shunt resistance R-sh were determined from the I-V characteristic in the dark conditions for Ag/p-CuPc/a-Si/n-Si/Ag and Ag/p-CuPc/a-Si/p-Si/Ag heterojunctions were found to be 2.5-5.7, 0.95-0.99 eV, 26-28.6 k Omega, and 9.2-3.7 M Omega, respectively. The photovoltaic properties of organic-inorganic hybrid heterojunction devices were evaluated by current-voltage characteristics under illumination. The hybrid heterojunctions shows a photovoltaic behavior and the photovoltaic parameters, such as open circuit voltage and short circuit current were obtained as V-oc = 167 mV and J(sc) = 18.4 mA/m(2), respectively. The Ag/p-CuPc/a-Si/c-Si/Ag hybrid heterojunctions can be using as a heterojunction photovoltaic devices. (c) 2013 Elsevier B.V. All rights reserved.
dc.description.sponsorshipTUBITAK The Scientific and Technological Research Council of Turkey Engineering Research GroupTurkiye Bilimsel ve Teknolojik Arastirma Kurumu (TUBITAK) [112M319]
dc.description.sponsorshipThis work was carried out with the support of TUBITAK The Scientific and Technological Research Council of Turkey Engineering Research Group (Project No:112M319). Author is thankful to The Scientific and Technological Research Council of Turkey.
dc.identifier.doi10.1016/j.mee.2013.01.062
dc.identifier.endpage157
dc.identifier.issn0167-9317
dc.identifier.scopus2-s2.0-84887569773
dc.identifier.scopusqualityQ2
dc.identifier.startpage150
dc.identifier.urihttps://doi.org/10.1016/j.mee.2013.01.062
dc.identifier.urihttps://hdl.handle.net/20.500.11776/7008
dc.identifier.volume108
dc.identifier.wosWOS:000321423200029
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.institutionauthorTatar, Beyhan
dc.language.isoen
dc.publisherElsevier Science Bv
dc.relation.ispartofMicroelectronic Engineering
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectCuPc
dc.subjectAmorphous silicon
dc.subjectHybrid heterojunctions
dc.subjectElectrical properties
dc.subjectPhthalocyanine Thin-Films
dc.subjectRaman-Scattering
dc.subjectSolar-Cells
dc.subjectSilicon
dc.subjectParameters
dc.subjectGrowth
dc.subjectDiode
dc.titleStructure and photovoltaic properties of Ag/p-CuPc/a-Si/c-Si/Ag organic-inorganic hybrid heterojunction fabricated by chemical spray pyrolysis technique
dc.typeArticle

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