Structural and photovoltaic properties of a-Si (SNc)/c-Si heterojunction fabricated by EBPVD technique

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dc.authorscopusid57200995971
dc.authorscopusid18042707800
dc.authorscopusid6506767312
dc.authorscopusid7003971869
dc.contributor.authorDemiroğlu, Dilek
dc.contributor.authorTatar, Beyhan
dc.contributor.authorKazmanli, K.
dc.contributor.authorÜrgen, Mustafa
dc.date.accessioned2022-05-11T14:29:30Z
dc.date.available2022-05-11T14:29:30Z
dc.date.issued2013
dc.departmentFakülteler, Fen Edebiyat Fakültesi, Fizik Bölümü
dc.descriptionDoga Nanobiotech Inc.;Mega Technology Services Inc.
dc.description3rd International Advances in Applied Physics and Materials Science Congress, APMAS 2013 -- 24 April 2013 through 28 April 2013 -- -- 111830
dc.description.abstractIn last two decades sculptured thin films are very attractive for researches. Some properties of these thin films, like high porosity correspondingly high large surface area, controlled morphology; bring into prominence on them. Sculptured thin films have wide application areas as electronics, optics, mechanics, magnetic and chemistry. Slanted nano-columnar (SnC) thin films are a type of sculptured thin films. In this investigation SnC thin films were growth on n-type crystalline Si(100) and p-type crystalline Si(111) via ultra-high vacuum electron beam evaporation technique. The structural and morphological properties of the amorphous silicon thin films were investigated by XRD, Raman and FE-SEM analysis. According to the XRD and Raman analysis the structure of thin film was amorphous and FE-SEM analysis indicated slanted nano-columns were formed smoothly. Slanted nano-columns a-Si/c-Si heterojunction were prepared as using a photovoltaic device. In this regard we were researched photovoltaic properties of these heterojunction with current-voltage characterization under dark and illumination conditions. Electrical parameters were determined from the current-voltage characteristic in the dark conditions zero-bias barrier height ? B0 =0.83-1.00eV; diode ideality factor ?=11.71-10.73; series resistance R s =260-31.1 k? and shunt resistance R sh =25.71-63.5 M? SnC a-Si/n-Si and SnC a-Si/p-Si heterojunctions shows a pretty good photovoltaic behavior about 10 3 - 10 4 times. The obtained photovoltaic parameters are such as short circuit current density J sc 83-40 mA/m 2 , open circuit voltage V oc 900-831 mV. © 2013 AIP Publishing LLC.
dc.identifier.doi10.1063/1.4849248
dc.identifier.endpage157
dc.identifier.isbn978-0735411975
dc.identifier.issn0094-243X
dc.identifier.scopus2-s2.0-85063827864
dc.identifier.scopusqualityN/A
dc.identifier.startpage154
dc.identifier.urihttps://doi.org/10.1063/1.4849248
dc.identifier.urihttps://hdl.handle.net/20.500.11776/7007
dc.identifier.volume1569
dc.indekslendigikaynakScopus
dc.institutionauthorTatar, Beyhan
dc.language.isoen
dc.publisherAmerican Institute of Physics Inc.
dc.relation.ispartofAIP Conference Proceedings
dc.relation.publicationcategoryKonferans Öğesi - Uluslararası - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectamorphous silicon
dc.subjectphotovoltaic properties
dc.subjectSlanted nano-Columnar thin films
dc.subjectstructural properties
dc.titleStructural and photovoltaic properties of a-Si (SNc)/c-Si heterojunction fabricated by EBPVD technique
dc.typeConference Object

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