Temperature dependence of electrical characteristics of Cr/p-Si(100) Schottky barrier diodes

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dc.authorid0000-0002-0781-3376
dc.authorscopusid18036952100
dc.authorscopusid8975743500
dc.authorscopusid8975743400
dc.authorscopusid16021109400
dc.authorwosidERTÜRK, KADİR/ABA-5148-2020
dc.authorwosidHacıismailoğlu, Muhammed Cüneyt/K-7950-2012
dc.contributor.authorErtürk, Kadir
dc.contributor.authorHaciismailoglu, M. C.
dc.contributor.authorBektore, Y.
dc.contributor.authorAhmetoglu, M.
dc.date.accessioned2022-05-11T14:29:28Z
dc.date.available2022-05-11T14:29:28Z
dc.date.issued2008
dc.departmentFakülteler, Fen Edebiyat Fakültesi, Fizik Bölümü
dc.description.abstractThe electrical characteristics of Cr/p-Si(100) Schottky barrier diodes have been measured in the temperature range of 100-300 K. The I-V analysis based on thermionic emission (TE) theory has revealed an abnormal decrease of apparent barrier height and increase of ideality factor at low temperature. The conventional Richardson plot exhibits non-linearity below 200 K with the linear portion corresponding to activation energy 0.304 eV and Richardson constant (A*) value of 5.41 x 10(-3) Acm(-2)K(-2) is determined from the intercept at the ordinate of this experimental plot, which is much lower than the known value of 32 Acm(-2)K(-2) for p-type Si. It is demonstrated that these anomalies result due to the barrier height inhomogeneities prevailing at the metal-semiconductor interface. Hence, it has been concluded that the temperature dependence of the I-V characteristics of the Cr/p-Si Schottky barrier diode can be successfully explained on the basis of TE mechanism with a Gaussian distribution of the barrier heights. Furthermore, the value of the Richardson constant found is much closer than that obtained without considering the inhomogeneous barrier heights.
dc.identifier.doi10.1142/S0217979208039496
dc.identifier.endpage2319
dc.identifier.issn0217-9792
dc.identifier.issue14en_US
dc.identifier.scopus2-s2.0-44949229109
dc.identifier.scopusqualityQ3
dc.identifier.startpage2309
dc.identifier.urihttps://doi.org/10.1142/S0217979208039496
dc.identifier.urihttps://hdl.handle.net/20.500.11776/6989
dc.identifier.volume22
dc.identifier.wosWOS:000257297500009
dc.identifier.wosqualityQ4
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.institutionauthorErtürk, Kadir
dc.language.isoen
dc.publisherWorld Scientific Publ Co Pte Ltd
dc.relation.ispartofInternational Journal of Modern Physics B
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectmetal-semiconductor contact
dc.subjectGaussian distribution
dc.subjectbarrier height inhomogeneity
dc.subjectI-V Measurements
dc.subjectAg/P-Sns
dc.subjectHeight
dc.subjectContacts
dc.subjectGaas
dc.subjectInhomogeneities
dc.subjectParameters
dc.subjectTransport
dc.subjectVoltage
dc.subjectRange
dc.titleTemperature dependence of electrical characteristics of Cr/p-Si(100) Schottky barrier diodes
dc.typeArticle

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