Structural and optical properties of pure ZnO and Al/Cu co-doped ZnO semiconductor thin films and electrical characterization of photodiodes

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dc.authorscopusid57226314496
dc.authorscopusid56247755900
dc.authorscopusid35890569200
dc.contributor.authorDemirbilek, N.
dc.contributor.authorYakuphanoğlu, F.
dc.contributor.authorKaya, M.
dc.date.accessioned2022-05-11T14:46:52Z
dc.date.available2022-05-11T14:46:52Z
dc.date.issued2021
dc.departmentMeslek Yüksekokulları, Çorlu Meslek Yüksekokulu, Makine ve Metal Teknolojileri Bölümü
dc.description.abstractNano-structured semiconductor thin films and p-type Si photodiodes were fabricated with the sol-gel spin coating technique using pure ZnO and co-doped ZnO:Alx:Cuy with x = 1 at.-%, y = 1, 2, 3, 5 at.-%. The structural and optical properties of thin films were examined using an XRD and a UV-spectrophotometer. The thin films have a hexagonal wurtzite crystal structure, and their optical band gap energies decrease with increasing Cu contribution. The electrical properties of photodiodes were assessed via I-V, C-V, (G/?)-V and phototransient current (I-t, C-t) measurements. The ?b(I-V), experimental zero-bias barrier height, rectification ratio, ideality factor and Ion/Ioff parameters of the diodes were calculated using thermoionic emission model. In addition, ?b(C-V), barrier height, Vbi, built-in voltage, Vd, diffusion potential, Nd, donor concentration and Wd, depletion layer width of p-Si/ZnO:Alx:Cuy (x = 1 at.-%, y = 1 at.-%.) photodiodes were obtained using a C-2-V graph plotted at 1 MHz frequency.The photodiodes exhibit rectifying and photosensitive behaviors, and their reverse bias current increases with increasing light intensity. These results indicate that produced diodes can be employed as photodiodes or photosensors in optoelectronic circuits and electronic devices. © 2021 Walter de Gruyter GmbH, Berlin/Boston, Germany.
dc.description.sponsorshipFirat Üniversitesi, FU: FF16.24
dc.description.sponsorshipThis study was supported by Firat University, for PhD thesis (Project No. FF16.24).
dc.identifier.endpage285
dc.identifier.issn0025-5300
dc.identifier.issue3en_US
dc.identifier.scopus2-s2.0-85117229362
dc.identifier.scopusqualityQ2
dc.identifier.startpage279
dc.identifier.urihttps://hdl.handle.net/20.500.11776/10383
dc.identifier.volume63
dc.indekslendigikaynakScopus
dc.institutionauthorKaya, Mehmet
dc.language.isoen
dc.publisherWalter de Gruyter GmbH
dc.relation.ispartofMaterialpruefung/Materials Testing
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectNanostructure
dc.subjectOptical properties
dc.subjectPhotodiode
dc.subjectSemiconductors
dc.subjectSol-gel
dc.subjectZnO
dc.subjectAluminum compounds
dc.subjectCopper compounds
dc.subjectCrystal structure
dc.subjectEnergy gap
dc.subjectII-VI semiconductors
dc.subjectLight sensitive materials
dc.subjectMagnetic semiconductors
dc.subjectOptical films
dc.subjectOxide semiconductors
dc.subjectPhotodiodes
dc.subjectPhotosensitivity
dc.subjectSemiconducting films
dc.subjectSemiconducting zinc compounds
dc.subjectSol-gel process
dc.subjectSol-gels
dc.subjectThin films
dc.subjectWide band gap semiconductors
dc.subjectZinc oxide
dc.subjectZinc sulfide
dc.subjectBarrier heights
dc.subjectCo-doped ZnO
dc.subjectElectrical characterization
dc.subjectNano-structured
dc.subjectPure Al
dc.subjectPure ZnO
dc.subjectSemiconductors thin films
dc.subjectSol'gel
dc.subjectStructural and optical properties
dc.subjectThin films characterization
dc.subjectNanostructures
dc.titleStructural and optical properties of pure ZnO and Al/Cu co-doped ZnO semiconductor thin films and electrical characterization of photodiodes
dc.typeArticle

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