Structural and optical properties of pure ZnO and Al/Cu co-doped ZnO semiconductor thin films and electrical characterization of photodiodes

Küçük Resim Yok

Tarih

2021

Dergi Başlığı

Dergi ISSN

Cilt Başlığı

Yayıncı

Walter de Gruyter GmbH

Erişim Hakkı

info:eu-repo/semantics/closedAccess

Özet

Nano-structured semiconductor thin films and p-type Si photodiodes were fabricated with the sol-gel spin coating technique using pure ZnO and co-doped ZnO:Alx:Cuy with x = 1 at.-%, y = 1, 2, 3, 5 at.-%. The structural and optical properties of thin films were examined using an XRD and a UV-spectrophotometer. The thin films have a hexagonal wurtzite crystal structure, and their optical band gap energies decrease with increasing Cu contribution. The electrical properties of photodiodes were assessed via I-V, C-V, (G/?)-V and phototransient current (I-t, C-t) measurements. The ?b(I-V), experimental zero-bias barrier height, rectification ratio, ideality factor and Ion/Ioff parameters of the diodes were calculated using thermoionic emission model. In addition, ?b(C-V), barrier height, Vbi, built-in voltage, Vd, diffusion potential, Nd, donor concentration and Wd, depletion layer width of p-Si/ZnO:Alx:Cuy (x = 1 at.-%, y = 1 at.-%.) photodiodes were obtained using a C-2-V graph plotted at 1 MHz frequency.The photodiodes exhibit rectifying and photosensitive behaviors, and their reverse bias current increases with increasing light intensity. These results indicate that produced diodes can be employed as photodiodes or photosensors in optoelectronic circuits and electronic devices. © 2021 Walter de Gruyter GmbH, Berlin/Boston, Germany.

Açıklama

Anahtar Kelimeler

Nanostructure, Optical properties, Photodiode, Semiconductors, Sol-gel, ZnO, Aluminum compounds, Copper compounds, Crystal structure, Energy gap, II-VI semiconductors, Light sensitive materials, Magnetic semiconductors, Optical films, Oxide semiconductors, Photodiodes, Photosensitivity, Semiconducting films, Semiconducting zinc compounds, Sol-gel process, Sol-gels, Thin films, Wide band gap semiconductors, Zinc oxide, Zinc sulfide, Barrier heights, Co-doped ZnO, Electrical characterization, Nano-structured, Pure Al, Pure ZnO, Semiconductors thin films, Sol'gel, Structural and optical properties, Thin films characterization, Nanostructures

Kaynak

Materialpruefung/Materials Testing

WoS Q Değeri

Scopus Q Değeri

Q2

Cilt

63

Sayı

3

Künye