A Study on Tetragonal-star like Shaped Inverted Pyramid Texturing

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dc.authorscopusid57194788012
dc.authorscopusid56538741400
dc.authorscopusid57193666915
dc.authorscopusid8947639800
dc.authorscopusid8307543400
dc.contributor.authorDonercark, E.
dc.contributor.authorÇiftpınar, E.H.
dc.contributor.authorTerlemezoğlu, Makbule
dc.contributor.authorÇolakoğlu, T.
dc.contributor.authorTuran, R.
dc.date.accessioned2022-05-11T14:03:19Z
dc.date.available2022-05-11T14:03:19Z
dc.date.issued2021
dc.departmentFakülteler, Fen Edebiyat Fakültesi, Fizik Bölümü
dc.description48th IEEE Photovoltaic Specialists Conference, PVSC 2021 -- 20 June 2021 through 25 June 2021 -- -- 171495
dc.description.abstractSurface texturing is one of the key process steps in solar cell fabrication. For an ideal surface texturing, surface recombination should be kept as low as possible while the light trapping property is improved. The formation of a random inverted pyramids is a good candidate with its improved light trapping properties compared to standard upright pyramid texturing and its reduced surface roughness compared to nanowire texturing resulting in reduced surface recombination velocity. In this work, we investigate a single step, lithography-free, Cu-assisted inverted pyramid texturing resulting in significantly reduced surface reflection on p-type Cz-Si. With the help of randomly distributed star-shaped inverted pyramid texturing on p-type Si, the weighted average reflection was reduced to 3% for p-type Si between 400-1000 nm. As a first cell trial, standard Al-BSF cells were fabricated using industrial process tools on p-wafer with star-shaped IPs. The low-cost, effective and repeatable nature of the developed single-step etching process has a high potential to replace surface texturing steps in the large-scale solar cell production cycle. Due to the implantation of star-shaped inverted pyramids to Al-BSF Si solar cell fabrication, short circuit current density was improved by more than 3.5%, resulting in 39.1mA/cm2. © 2021 IEEE.
dc.identifier.doi10.1109/PVSC43889.2021.9518944
dc.identifier.endpage221
dc.identifier.isbn978-1665419222
dc.identifier.issn0160-8371
dc.identifier.scopus2-s2.0-85115974754
dc.identifier.scopusqualityN/A
dc.identifier.startpage219
dc.identifier.urihttps://doi.org/10.1109/PVSC43889.2021.9518944
dc.identifier.urihttps://hdl.handle.net/20.500.11776/4669
dc.identifier.wosWOS:000701690400050
dc.identifier.wosqualityN/A
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.institutionauthorTerlemezoğlu, Makbule
dc.language.isoen
dc.publisherInstitute of Electrical and Electronics Engineers Inc.
dc.relation.ispartofConference Record of the IEEE Photovoltaic Specialists Conference
dc.relation.publicationcategoryKonferans Öğesi - Uluslararası - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectCu-assisted etching
dc.subjectinverted pyramid
dc.subjectstar-shaped
dc.subjectAluminum compounds
dc.subjectCosts
dc.subjectEtching
dc.subjectSilicon compounds
dc.subjectSilicon solar cells
dc.subjectStars
dc.subjectSurface roughness
dc.subjectCu-assisted etching
dc.subjectInverted pyramid
dc.subjectLight-trapping
dc.subjectP-type Si
dc.subjectSingle-step
dc.subjectSolar cell fabrication
dc.subjectStar-like
dc.subjectStar-shaped
dc.subjectSurface-texturing
dc.subjectTrapping properties
dc.subjectSilicon wafers
dc.titleA Study on Tetragonal-star like Shaped Inverted Pyramid Texturing
dc.typeConference Object

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