Correlation of DC and AC electrical properties of Al/p-Si structure by I-V-T and C(G/omega)-V-T measurements

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dc.authorid0000-0003-3048-6534
dc.authorid0000-0003-3463-2009
dc.authorscopusid36818588600
dc.authorscopusid18042707800
dc.authorscopusid24825832500
dc.authorscopusid55634266300
dc.authorscopusid18042118900
dc.authorwosidGokdemir Choi, Fatma Pinar/D-1368-2014
dc.authorwosidTatar, Beyhan/ABA-6195-2020
dc.contributor.authorÖzdemir, Orhan
dc.contributor.authorTatar, Beyhan
dc.contributor.authorYılmazer, Deneb
dc.contributor.authorGökdemir, Pınar
dc.contributor.authorKutlu, Kubilay
dc.date.accessioned2022-05-11T14:29:28Z
dc.date.available2022-05-11T14:29:28Z
dc.date.issued2009
dc.departmentFakülteler, Fen Edebiyat Fakültesi, Fizik Bölümü
dc.description.abstractCurrent-voltage-temperature and admittance-gate bias-temperature measurements were performed on Al/p-Si structure to investigate transport and storage properties. In forward direction of former measurement, three distinct voltage regions designated different transport mechanisms: recombination, tunneling and space charge limited current. In the reverse direction, current seemed to be roughly proportional to the square root of bias at low region. Activation energy (E-A) as 0.56 eV together with the ideality factor around 1.5 confirmed that generation-recombination current was the actual current transport mechanism. Increase in applied bias resulted in the appearance of other mechanisms: tunneling and space charge limited current, deduced by temperature-independent current flow and power of bias (greater than 2) in both forward and reverse directions, respectively. On the other hand, the distinctive bias voltage regions in current-voltage-temperature measurement corresponded to inverting, depleting and accumulating gate bias regimes in typical M(I)S structure for admittance analysis. Conductance branch of admittance reflected a similar behavior with that of the measurement under both temperature and frequency as parameter. On the other hand, with the aid of capacitance branch of admittance in the light of mentioned regimes and their corresponding energy band diagrams, correlation with ac and dc electrical properties was carried out. (C) 2009 Elsevier Ltd. All rights reserved.
dc.description.sponsorshipYildiz Technical University Scientific Research Project CouncilYildiz Technical University [27-01-01-05]
dc.description.sponsorshipThis work was carried out with the financial support of Yildiz Technical University Scientific Research Project Council (BAPK-Project no. 27-01-01-05). The authors are gratefull to Prof. Dr. Mustafa ORGEN for GD-OES and FEG-SEM analyses.
dc.identifier.doi10.1016/j.mssp.2009.09.005
dc.identifier.endpage141
dc.identifier.issn1369-8001
dc.identifier.issn1873-4081
dc.identifier.issue45416en_US
dc.identifier.scopus2-s2.0-77249084593
dc.identifier.scopusqualityQ1
dc.identifier.startpage133
dc.identifier.urihttps://doi.org/10.1016/j.mssp.2009.09.005
dc.identifier.urihttps://hdl.handle.net/20.500.11776/6990
dc.identifier.volume12
dc.identifier.wosWOS:000276134600001
dc.identifier.wosqualityQ4
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.institutionauthorTatar, Beyhan
dc.language.isoen
dc.publisherElsevier Sci Ltd
dc.relation.ispartofMaterials Science in Semiconductor Processing
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectCurrent mechanisms
dc.subjectAdmittance
dc.subjectDeep depletion
dc.subjectSurface band bending
dc.subjectSchottky-Barrier Diodes
dc.subjectMis Tunnel-Diodes
dc.subjectCrystalline Silicon Heterojunctions
dc.subjectVoltaic Energy-Conversion
dc.subjectCurrent Transport
dc.subjectLow-Temperatures
dc.subjectAdmittance
dc.subjectFilm
dc.subjectCapacitance
dc.subjectMechanism
dc.titleCorrelation of DC and AC electrical properties of Al/p-Si structure by I-V-T and C(G/omega)-V-T measurements
dc.typeArticle

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