The memristive system behavior of a diac

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dc.authorscopusid36975765700
dc.authorscopusid36515307500
dc.authorwosidKARAKULAK, Ertugrul/ABA-5752-2020
dc.authorwosidMutlu, Resat/ABA-5309-2020
dc.contributor.authorKarakulak, Ertuğrul
dc.contributor.authorMutlu, Reşat
dc.date.accessioned2022-05-11T14:15:36Z
dc.date.available2022-05-11T14:15:36Z
dc.date.issued2020
dc.departmentFakülteler, Çorlu Mühendislik Fakültesi, Elektronik ve Haberleşme Mühendisliği Bölümü
dc.departmentMeslek Yüksekokulları, Teknik Bilimler Meslek Yüksekokulu, Elektronik ve Otomasyon Bölümü
dc.description.abstractThe memristor was introduced as a nonlinear circuit element in 1971, and systems showing memristor-like properties such as zero-crossing hysteresis loops were described in 1976. In 2008, a thin-film system that behaved like a memristor over some part of its operating region was discovered. Memristors and memristive systems have thus become a hot research area in recent years, making it important to discover and study such systems that show memristive behavior. Memristors and memristive systems exhibit three distinguishing characteristics that are known as their three fingerprints. Discharge lamps were also shown to exhibit memristive behavior recently. The diac, an electronics component commonly used in alternating-current (AC) applications, exhibits a breakdown mechanism similar to that observed in discharge lamps. According to textbooks, a diac should also obey the characteristics of a memristive system. In this work, a phenomenological model for a diac is first presented, and it is shown that this model satisfies the description of a memristive system; circuit simulations are also used to verify the memristive system behavior of a diac. However, experiments performed on a DB32 diac reveal that it only behaves like a memristive system in a narrow frequency range around 1 kHz. The effect of the junction capacitances of the diac are found to be important in this regard, resulting in the deviation of the diac from the expected memristive system behavior, as supported by the model and circuit simulations. We also believe that the reverse recovery current at frequencies above 1 kHz inhibits the zero-crossing behavior of the diac, even though its hysteresis curve is very similar to that of a memristive system.
dc.identifier.doi10.1007/s10825-020-01495-5
dc.identifier.endpage1355
dc.identifier.issn1569-8025
dc.identifier.issn1572-8137
dc.identifier.issue3en_US
dc.identifier.scopus2-s2.0-85083786725
dc.identifier.scopusqualityQ3
dc.identifier.startpage1344
dc.identifier.urihttps://doi.org/10.1007/s10825-020-01495-5
dc.identifier.urihttps://hdl.handle.net/20.500.11776/5990
dc.identifier.volume19
dc.identifier.wosWOS:000545220500042
dc.identifier.wosqualityQ3
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.institutionauthorMutlu, Reşat
dc.institutionauthorKarakulak, Ertuğrul
dc.language.isoen
dc.publisherSpringer
dc.relation.ispartofJournal of Computational Electronics
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectDiacs
dc.subjectMemristors
dc.subjectMemristive system modeling
dc.subjectSemiconductors
dc.subjectComplementary Resistive Switches
dc.subjectCircuit Elements
dc.titleThe memristive system behavior of a diac
dc.typeArticle

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