Frequency effect on electrical and dielectric characteristics of In/Cu 2 ZnSnTe 4 /Si/Ag diode structure

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dc.authorscopusid36766075800
dc.authorscopusid55660608000
dc.authorscopusid57193666915
dc.authorscopusid16023635100
dc.authorscopusid7003589218
dc.contributor.authorGüllü, H. H.
dc.contributor.authorBayraklı Sürücü, Özge
dc.contributor.authorTerlemezoğlu, Makbule
dc.contributor.authorYıldız, D. E.
dc.contributor.authorParlak, Mehmet
dc.date.accessioned2022-05-11T14:03:16Z
dc.date.available2022-05-11T14:03:16Z
dc.date.issued2019
dc.departmentFakülteler, Fen Edebiyat Fakültesi, Fizik Bölümü
dc.description.abstractIn/Cu 2 ZnSnTe 4 /Si/Ag diode structure was fabricated by sputtering Cu 2 ZnSnTe 4 (CZTTe) thin film layer on the Si layer with In front contact. The frequency dependent room temperature capacitance and conductance measurements were carried out to obtain detailed information of its electrical characteristics. Admittance spectra of the diode exhibited strong frequency dependence and the obtained values showed decreasing behavior with the increase in the applied frequency. The effect of interfacial film layer with series resistance values and density of interface states were investigated by taking into consideration of non-ideal electrical characteristics of the diode. The distribution profile of the interface states was extracted by Hill-Coleman and high–low frequency capacitance methods. As a function of frequency, they were in proportionality with the inverse of applied frequency. Dielectric constant and dielectric loss parameters were calculated from the maximum value of the diode capacitance at the strong accumulation region. The loss tangent showed a characteristic peak behavior at each frequency. Based on the time-dependent response of the interfacial charges to the applied ac field, the values of ac electrical conductivity and complex electric modulus were calculated and discussed as a function of frequency and bias voltage. © 2019, Springer Science+Business Media, LLC, part of Springer Nature.
dc.identifier.doi10.1007/s10854-019-01318-9
dc.identifier.endpage9821
dc.identifier.issn0957-4522
dc.identifier.issue10en_US
dc.identifier.scopus2-s2.0-85064555655
dc.identifier.scopusqualityQ2
dc.identifier.startpage9814
dc.identifier.urihttps://doi.org/10.1007/s10854-019-01318-9
dc.identifier.urihttps://hdl.handle.net/20.500.11776/4654
dc.identifier.volume30
dc.identifier.wosWOS:000468437800077
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.institutionauthorTerlemezoğlu, Makbule
dc.language.isoen
dc.publisherSpringer New York LLC
dc.relation.ispartofJournal of Materials Science: Materials in Electronics
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectCapacitance
dc.subjectCopper compounds
dc.subjectDielectric losses
dc.subjectDiodes
dc.subjectElectric resistance
dc.subjectSilicon
dc.subjectSilver compounds
dc.subjectTellurium compounds
dc.subjectTin compounds
dc.subjectZinc compounds
dc.subjectAC electrical conductivity
dc.subjectConductance measurement
dc.subjectDensity of interface state
dc.subjectDielectric characteristics
dc.subjectElectrical characteristic
dc.subjectFunction of frequency
dc.subjectSeries resistance values
dc.subjectTime-dependent response
dc.subjectInterface states
dc.titleFrequency effect on electrical and dielectric characteristics of In/Cu 2 ZnSnTe 4 /Si/Ag diode structure
dc.typeArticle

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