Analysis of current conduction mechanism in CZTSSe/n-Si structure

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dc.authorid0000-0001-7912-0176
dc.authorid0000-0001-9542-5121
dc.authorid0000-0001-8949-8607
dc.authorid0000-0001-8541-5309
dc.authorid0000-0002-8478-1267
dc.authorid0000-0003-2212-199X
dc.authorscopusid57193666915
dc.authorscopusid55660608000
dc.authorscopusid36766075800
dc.authorscopusid8947639800
dc.authorscopusid16023635100
dc.authorscopusid7003589218
dc.authorwosidTerlemezoglu, Makbule/ABA-5010-2020
dc.authorwosidparlak, mehmet/ABB-8651-2020
dc.authorwosidGULLU, HASAN HUSEYIN/F-7486-2019
dc.authorwosidColakoglu, Tahir/AAC-4698-2019
dc.authorwosidSURUCU, Ozge/ABA-4839-2020
dc.authorwosidYıldız, Dilber Esra/AAB-6411-2020
dc.contributor.authorTerlemezoğlu, Makbule
dc.contributor.authorBayraklı Sürücü, Özge
dc.contributor.authorGüllü, Hasan Hüseyin
dc.contributor.authorÇolako?lu, Tahir
dc.contributor.authorYıldız, Dilber Esra
dc.contributor.authorParlak, Mehmet
dc.date.accessioned2022-05-11T14:29:34Z
dc.date.available2022-05-11T14:29:34Z
dc.date.issued2018
dc.departmentFakülteler, Fen Edebiyat Fakültesi, Fizik Bölümü
dc.description.abstractIn this study, Cu2ZnSn(S,Se)(4) (CZTSSe) thin films were deposited by the single step thermal evaporation process using the sintered powder of CZTSSe on soda lime glass (SLG) and Si wafer substrates. The structural, optical, and electrical properties of deposited films were investigated. Current-voltage (I-V) in the temperature range of 250-350 K, capacitance-voltage(C-V) and conductance-voltage (G/w-V) measurements at room temperature were carried out to determine electrical properties of CZTSSe/n-Si structure. The forward bias I-V analysis based on thermionic emission (TE) showed barrier height inhomogeneity at the interface and thus, the conduction mechanism was modeled under the assumption of Gaussian distribution of barrier height. The mean barrier height and standard deviation at zero bias were obtained as 1.27 eV and 0.18 V, respectively. Moreover, Richardson constant was obtained as 120.46 A cm(-2) K-2 via modified Richardson plot and the density of interface states (D-it) profile was determined using the data obtained from forward bias I-V measurements. In addition, by the results of frequency dependent C-V measurements, characteristics of the interface state density were calculated applying high-low frequency capacitance (C-HF - C-LF) and Hill-Coleman methods.
dc.identifier.doi10.1007/s10854-017-8490-1
dc.identifier.endpage5274
dc.identifier.issn0957-4522
dc.identifier.issn1573-482X
dc.identifier.issue7en_US
dc.identifier.scopus2-s2.0-85040081041
dc.identifier.scopusqualityQ2
dc.identifier.startpage5264
dc.identifier.urihttps://doi.org/10.1007/s10854-017-8490-1
dc.identifier.urihttps://hdl.handle.net/20.500.11776/7037
dc.identifier.volume29
dc.identifier.wosWOS:000427680400003
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.institutionauthorTerlemezoğlu, Makbule
dc.language.isoen
dc.publisherSpringer
dc.relation.ispartofJournal of Materials Science-Materials in Electronics
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectCurrent-Voltage Characteristics
dc.subjectFilm Solar-Cells
dc.subjectPhotovoltaic Properties
dc.subjectElectron-Transport
dc.subjectSchottky Contacts
dc.subjectBarrier Heights
dc.subjectPhase-Formation
dc.subjectThin-Films
dc.subjectTemperature
dc.subjectInhomogeneities
dc.titleAnalysis of current conduction mechanism in CZTSSe/n-Si structure
dc.typeArticle

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