Alternative approach for determination of energy band gap of semiconductors through electrical analysis

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dc.authorscopusid36818588600
dc.authorscopusid18042707800
dc.authorscopusid24825832500
dc.authorscopusid55634266300
dc.authorscopusid7003971869
dc.authorscopusid18042118900
dc.contributor.authorÖzdemir, Orhan
dc.contributor.authorTatar, Beyhan
dc.contributor.authorYılmazer, Deneb
dc.contributor.authorGökdemir, Pınar
dc.contributor.authorÜrgen, Mustafa
dc.contributor.authorKutlu, Kubilay
dc.date.accessioned2022-05-11T14:29:29Z
dc.date.available2022-05-11T14:29:29Z
dc.date.issued2010
dc.departmentFakülteler, Fen Edebiyat Fakültesi, Fizik Bölümü
dc.descriptionNational and Kapodistrian University of Athens;University of Crete;University of Ioannina;University of Patras;Aristotelian University of Thessaloniki
dc.description7th International Conference of the Balkan Physical Union -- 9 September 2009 through 13 September 2009 -- Alexandroupolis -- 79345
dc.description.abstractTraditional way of extracting energy band gap (EG) of semiconductors from UV-Visible transmisson measurement becomes difficult once EG lies below than 1 eV. Instead of optical excitation of electrons from valance to conduction bands, Schockley-Read-Hall statistics was considered to determine EG by electrical analysis. According to the statistics, generation recombination and diffusion mechanisms were expected, differing through activation energy. The first processes become dominant at intermatiate temperature where activation energy would be half of the band gap whereas the second one occurs under high temperature side where activation energy would be equal to the band gap. Based on that ac conductance(capacitance)-temperature- frequency (G(C)-T-?) measurements were performed to obtain energy band gap of semiconductors having narrow EG such as iron silicide, ?-FeSi2, chromium silicide, CrSi2 grown on crystaline silicon substrates. Satisfactory EG results were obtained as 0.85 eV and 0.25 eV for ?-FeSi2 and CrSi2, respectively. At last, the approach was tested on well known MIS (abbreviation of metal-insulator-semiconductor) type structure; the acquired EG convinced that the approach was applicable and reliable. © 2009 American Institute of Physics.
dc.identifier.doi10.1063/1.3322575
dc.identifier.endpage882
dc.identifier.isbn978-0735407404
dc.identifier.issn0094-243X
dc.identifier.scopus2-s2.0-76749150529
dc.identifier.scopusqualityN/A
dc.identifier.startpage875
dc.identifier.urihttps://doi.org/10.1063/1.3322575
dc.identifier.urihttps://hdl.handle.net/20.500.11776/6993
dc.identifier.volume1203
dc.indekslendigikaynakScopus
dc.institutionauthorTatar, Beyhan
dc.language.isoen
dc.relation.ispartofAIP Conference Proceedings
dc.relation.publicationcategoryKonferans Öğesi - Uluslararası - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectAdmittance-temperature-frequency
dc.subjectAlternative approach
dc.subjectNarrow band gap semiconductors
dc.titleAlternative approach for determination of energy band gap of semiconductors through electrical analysis
dc.typeConference Object

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