Characterization of Cu-rich and Zn-poor Cu2ZnSnS4 single crystal grown by vertical Bridgman technique

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dc.authorscopusid56993881400
dc.authorscopusid57193666915
dc.authorscopusid7003589218
dc.authorscopusid15622745500
dc.contributor.authorPeksu, Elif
dc.contributor.authorTerlemezoğlu, Makbule
dc.contributor.authorParlak, Mehmet
dc.contributor.authorKaraağaç, Hakan
dc.date.accessioned2022-05-11T14:03:19Z
dc.date.available2022-05-11T14:03:19Z
dc.date.issued2021
dc.departmentFakülteler, Fen Edebiyat Fakültesi, Fizik Bölümü
dc.description.abstractTo date, although a number of studies have focused on understanding the fundamental properties of Cu-poor/Zn-rich Cu2ZnSnS4 (CZTS) single crystals, little attention has been paid to investigate the physical properties of those with a Cu-rich / Zn-poor chemical composition. Therefore, in this study, the structural and electrical properties of Cu-rich/Zn-poor CZTS single crystal grown by the Bridgman technique have been studied in order to fill this gap in literature. XRD and Raman findings confirm the growth of CZTS single crystal having a kesterite phase without secondary phases. Hall and temperature dependent conductivity measurements reveal the presence of VCu and CuZn antisite point defects in CZTS during the growth stage with thermal activation energies of 15 meV and ?100 meV, respectively. Hall mobility, resistivity and hole carrier concentration values at room temperature were found to be 1.2 cm2/V.s, 16.2 ?.cm and 3.1 × 1017 cm?3, respectively. © 2021 Elsevier B.V.
dc.description.sponsorship315M401
dc.description.sponsorshipThis work was supported by Turkish Scientific and Research Council (TUBITAK) under Grant no 315M401.
dc.identifier.doi10.1016/j.jcrysgro.2021.126336
dc.identifier.issn0022-0248
dc.identifier.scopus2-s2.0-85115036020
dc.identifier.scopusqualityQ2
dc.identifier.urihttps://doi.org/10.1016/j.jcrysgro.2021.126336
dc.identifier.urihttps://hdl.handle.net/20.500.11776/4670
dc.identifier.volume574
dc.identifier.wosWOS:000703880400004
dc.identifier.wosqualityQ3
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.institutionauthorTerlemezoğlu, Makbule
dc.language.isoen
dc.publisherElsevier B.V.
dc.relation.ispartofJournal of Crystal Growth
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectConductivity
dc.subjectCu2ZnSnS4
dc.subjectSingle crystal
dc.subjectSolar cell
dc.subjectActivation energy
dc.subjectBinary alloys
dc.subjectHall mobility
dc.subjectHole concentration
dc.subjectHole mobility
dc.subjectPoint defects
dc.subjectSolar cells
dc.subjectChemical compositions
dc.subjectConductivity
dc.subjectCu-poor
dc.subjectFundamental properties
dc.subjectKesterites
dc.subjectSecondary phase
dc.subjectStructural and electrical properties
dc.subjectVertical Bridgman technique
dc.subjectXRD
dc.subjectSingle crystals
dc.titleCharacterization of Cu-rich and Zn-poor Cu2ZnSnS4 single crystal grown by vertical Bridgman technique
dc.typeArticle

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