Structural and temperature-tuned bandgap characteristics of thermally evaporated beta-In2S3 thin films

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dc.authorid0000-0002-8478-1267
dc.authorwosidSURUCU, Ozge/ABA-4839-2020
dc.contributor.authorSürücü, O.
dc.contributor.authorIşık, M.
dc.contributor.authorTerlemezoğlu, Makbule
dc.contributor.authorGasanly, N. M.
dc.contributor.authorParlak, M.
dc.date.accessioned2022-05-11T14:03:20Z
dc.date.available2022-05-11T14:03:20Z
dc.date.issued2021
dc.departmentFakülteler, Fen Edebiyat Fakültesi, Fizik Bölümü
dc.description.abstractIn2S3 is one of the attractive compounds taking remarkable interest in optoelectronic device applications. The present study reports the structural and optical characteristics of thermally evaporated beta-In2S3 thin films. The crystalline structure of the thin films was found as cubic taking into account the observed diffraction peaks in the X-ray diffraction pattern. The atomic compositional ratio of constituent elements was obtained as consistent with chemical formula of In2S3. Three peaks around 275, 309 and 369 cm(-1) were observed in the Raman spectrum. Temperature-tuned bandgap energy characteristics of the In2S3 thin films were revealed from the investigation of transmittance spectra obtained at various temperatures between 10 and 300 K. The analyses of the transmittance spectra indicated that direct bandgap energy of the In2S3 thin films decreases from 2.40 eV (at 10 K) to 2.37 eV (at 300 K) with the increase of measurement temperature. The bandgap energy vs. temperature relation was investigated by means of Varshni optical model. The fitting of the experimental data under the light of theoretical expression revealed the absolute zero bandgap energy, the rate of change of bandgap energy and Debye temperature.
dc.identifier.doi10.1007/s10854-021-06137-5
dc.identifier.endpage15856
dc.identifier.issn0957-4522
dc.identifier.issn1573-482X
dc.identifier.issue12en_US
dc.identifier.scopus2-s2.0-85105942057
dc.identifier.scopusqualityQ2
dc.identifier.startpage15851
dc.identifier.urihttps://doi.org/10.1007/s10854-021-06137-5
dc.identifier.urihttps://hdl.handle.net/20.500.11776/4675
dc.identifier.volume32
dc.identifier.wosWOS:000650515400001
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.institutionauthorTerlemezoğlu, Makbule
dc.language.isoen
dc.publisherSpringer
dc.relation.ispartofJournal Of Materials Science-Materials In Electronics
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectOptical-Properties
dc.subjectPhysical-Properties
dc.subjectHeterostructure
dc.subjectPhotodetector
dc.subjectZn1-Xmgxse
dc.titleStructural and temperature-tuned bandgap characteristics of thermally evaporated beta-In2S3 thin films
dc.typeArticle

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