Characterization of one-step deposited Cu2ZnSnS4 thin films derived from a single crystalline powder

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dc.authorid0000-0001-7912-0176
dc.authorid0000-0002-1409-4090
dc.authorid0000-0001-9542-5121
dc.authorscopusid56993881400
dc.authorscopusid57193666915
dc.authorscopusid7003589218
dc.authorscopusid15622745500
dc.authorwosidTerlemezoglu, Makbule/ABA-5010-2020
dc.authorwosidKaraagac, Hakan/ABA-7411-2020
dc.authorwosidparlak, mehmet/ABB-8651-2020
dc.contributor.authorPeksu, Elif
dc.contributor.authorTerlemezoğlu, Makbule
dc.contributor.authorParlak, Mehmet
dc.contributor.authorKaraağaç, Hakan
dc.date.accessioned2022-05-11T14:29:34Z
dc.date.available2022-05-11T14:29:34Z
dc.date.issued2019
dc.departmentFakülteler, Fen Edebiyat Fakültesi, Fizik Bölümü
dc.description.abstractIn this paper, Cu-deficient and Zn-rich Cu2ZnSnS4 (CZTS) single crystals were successfully grown by Bridgman technique. Following the investigation of structural and photo-electrical properties of the grown CZTS crystal, the powder extracted from it was evaporated through electron-beam technique for the fabrication of CZTS thin films by one-step deposition. Compositional analysis revealed that CZTS thin films were obtained with a composition stoichiometry very close to that measured for the crystal powder. Detailed XRD and Raman analyses have shown that the as-grown CZTS films have an amorphous matrix and then transform into a polycrystalline form with a monophase kesterite phase having (112) oriented plane direction following the post-annealing process at 500 degrees C. The optical band gap was found to be 1.50 eV for the CZTS film annealed 500 degrees C. The conducted photo-electrical measurements revealed that CZTS thin films have good sensitivity to the visible light, which is essential for an absorber layer in the solar cell device structure. The room temperature values of conductivity, mobility and hole carrier concentration of the films annealed at 500 degrees C were determined as similar to 5.1 x 10(-4) (Omega cm)(-1), 1.22 cm(2)/V s and 2.6 x 10(15) cm(-3), respectively. (C) 2019 Elsevier Ltd. All rights reserved.
dc.description.sponsorshipTurkish Scientific and Research Council (TUBITAK)Turkiye Bilimsel ve Teknolojik Arastirma Kurumu (TUBITAK) [315M401]
dc.description.sponsorshipThis work was supported by Turkish Scientific and Research Council (TUBITAK) under Grant no 315M401.
dc.identifier.doi10.1016/j.renene.2019.05.076
dc.identifier.endpage1142
dc.identifier.issn0960-1481
dc.identifier.scopus2-s2.0-85066439541
dc.identifier.scopusqualityQ1
dc.identifier.startpage1133
dc.identifier.urihttps://doi.org/10.1016/j.renene.2019.05.076
dc.identifier.urihttps://hdl.handle.net/20.500.11776/7042
dc.identifier.volume143
dc.identifier.wosWOS:000482686100012
dc.identifier.wosqualityQ1
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.institutionauthorTerlemezoğlu, Makbule
dc.language.isoen
dc.publisherPergamon-Elsevier Science Ltd
dc.relation.ispartofRenewable Energy
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectCu2ZnSnS4
dc.subjectBridgman technique
dc.subjectElectron beam
dc.subjectSolar cell
dc.subjectOptical-Properties
dc.subjectFabrication
dc.subjectGrowth
dc.subjectSulfurization
dc.titleCharacterization of one-step deposited Cu2ZnSnS4 thin films derived from a single crystalline powder
dc.typeArticle

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