Investigation of electrical characteristics of Ag/ZnO/Si sandwich structure

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dc.authorscopusid36766075800
dc.authorscopusid55660608000
dc.authorscopusid57193666915
dc.authorscopusid16023635100
dc.authorscopusid7003589218
dc.contributor.authorGüllü, H. H.
dc.contributor.authorBayraklı Sürücü, Özge
dc.contributor.authorTerlemezoğlu, Makbule
dc.contributor.authorYıldız, D. E.
dc.contributor.authorParlak, Mehmet
dc.date.accessioned2022-05-11T14:03:16Z
dc.date.available2022-05-11T14:03:16Z
dc.date.issued2019
dc.departmentFakülteler, Fen Edebiyat Fakültesi, Fizik Bölümü
dc.description.abstractIn this study, temperature-dependent current–voltage (I–V), frequency-dependent capacitance–voltage (C–V) and conductance–voltage (G/ ?- V) measurements are carried out for the electrical characterization of a zinc oxide (ZnO) thin film-based diode. The sandwich structure in the form of Ag/ZnO/Si/Al is investigated at temperatures between 220 and 360 K and in the frequency region of 1 kHz–1 MHz. ZnO thin film layer is deposited on a p-Si wafer substrate as a transparent conductive oxide layer by taking into consideration possible electronic applications with intrinsic attractive material properties. At each temperature step, the I–V curves showed about two orders of magnitude rectifying behavior and, according to the Schottky diode relation, the saturation current, zero-bias barrier height and ideality factor were extracted as a function of the temperature. In the case of non-ideal diode characteristics due to the inhomogeneties in the diode as observed from the characteristics of the calculated parameters, effective barrier height values are evaluated. In addition, based on the existence of the interface layer, density of interface states in the band gap region and parasitic resistances were determined by the capacitance measurements. © 2019, Springer Science+Business Media, LLC, part of Springer Nature.
dc.identifier.doi10.1007/s10854-019-01913-w
dc.identifier.endpage15378
dc.identifier.issn0957-4522
dc.identifier.issue16en_US
dc.identifier.scopus2-s2.0-85069663419
dc.identifier.scopusqualityQ2
dc.identifier.startpage15371
dc.identifier.urihttps://doi.org/10.1007/s10854-019-01913-w
dc.identifier.urihttps://hdl.handle.net/20.500.11776/4655
dc.identifier.volume30
dc.identifier.wosWOS:000480558400057
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.institutionauthorTerlemezoğlu, Makbule
dc.language.isoen
dc.publisherSpringer New York LLC
dc.relation.ispartofJournal of Materials Science: Materials in Electronics
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectCapacitance measurement
dc.subjectDiodes
dc.subjectEnergy gap
dc.subjectII-VI semiconductors
dc.subjectInterface states
dc.subjectSandwich structures
dc.subjectSchottky barrier diodes
dc.subjectSilicon compounds
dc.subjectSilicon wafers
dc.subjectSubstrates
dc.subjectThin films
dc.subjectZinc oxide
dc.subjectDensity of interface state
dc.subjectEffective barrier heights
dc.subjectElectrical characteristic
dc.subjectElectrical characterization
dc.subjectElectronic application
dc.subjectFrequency-dependent capacitance
dc.subjectParasitic resistances
dc.subjectTransparent conductive oxides
dc.subjectCapacitance
dc.titleInvestigation of electrical characteristics of Ag/ZnO/Si sandwich structure
dc.typeArticle

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