The influence of Er3+ doping on the structural and optical properties of CeO2 thin films grown by PED

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dc.authorid0000-0003-3048-6534
dc.authorid0000-0003-3549-0049
dc.authorid0000-0003-3463-2009
dc.authorscopusid18042707800
dc.authorscopusid55634266300
dc.authorscopusid14626776900
dc.authorscopusid7003971869
dc.authorwosidTatar, Beyhan/ABA-6195-2020
dc.authorwosidGokdemir Choi, Fatma Pinar/D-1368-2014
dc.authorwosidUrgen, Mustafa/D-5422-2014
dc.contributor.authorTatar, Beyhan
dc.contributor.authorGökdemir, Fatma Pınar
dc.contributor.authorPehlivan, Esat
dc.contributor.authorÜrgen, Mustafa
dc.date.accessioned2022-05-11T14:29:30Z
dc.date.available2022-05-11T14:29:30Z
dc.date.issued2013
dc.departmentFakülteler, Fen Edebiyat Fakültesi, Fizik Bölümü
dc.description.abstractErbium doped CeO2 thin films were deposited on both Corning glass substrates and indium doped tin oxide (ITO) coated glass substrates by pulsed e-beam deposition (PED) method at room temperature. Structural features of Er doped CeO2 thin films were studied with X-ray diffraction (XRD) and micro-Raman spectra. The XRD patterns of all films showed polycrystalline nature and cubic crystalline structure. Raman active peaks for both undoped CeO2 and Er doped CeO2 films were determined at similar to 465 cm(-1). The Raman shift observed in this study can also be assigned to Raman active modes of CeO2 that are shifted from the original position due to different doping concentration. The optical properties of CeO2 films and Er doped CeO2 films, which were determined from transmittance and reflectance measurements at room temperature, were very similar in character. The refractive indices and extinction coefficients, which were calculated from 3.5 to 1.25 eV (300-1000 nm), were between 1.5-3 and 0.05-0.2, respectively. The optical band gaps were deduced from the absorption coefficient according to solid band theory. The electrochromic measurements revealed that 2% Er doped CeO2 films grown on ITO + WO3 substrates had highest charge density compared to the other samples. Long-time cyclic voltammetry (CV) and chronoamperometry (CA) measurements were carried out to investigate the stability of this film. (C) 2013 Elsevier B.V. All rights reserved.
dc.identifier.doi10.1016/j.apsusc.2013.08.068
dc.identifier.endpage416
dc.identifier.issn0169-4332
dc.identifier.issn1873-5584
dc.identifier.scopus2-s2.0-84887090202
dc.identifier.scopusqualityQ1
dc.identifier.startpage409
dc.identifier.urihttps://doi.org/10.1016/j.apsusc.2013.08.068
dc.identifier.urihttps://hdl.handle.net/20.500.11776/7009
dc.identifier.volume285
dc.identifier.wosWOS:000326579400043
dc.identifier.wosqualityQ1
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.institutionauthorTatar, Beyhan
dc.language.isoen
dc.publisherElsevier Science Bv
dc.relation.ispartofApplied Surface Science
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectElectrochromic materials
dc.subjectCeO2 crystal structure
dc.subjectEr doping
dc.subjectOptical properties
dc.subjectElectrochemical properties
dc.subjectChemical-Vapor-Deposition
dc.subjectCerium Oxide
dc.subjectDoped Ceria
dc.subjectMicrostructure
dc.subjectPerformance
dc.subjectPrecursors
dc.subjectCoatings
dc.subjectApatite
dc.titleThe influence of Er3+ doping on the structural and optical properties of CeO2 thin films grown by PED
dc.typeArticle

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