Electrical properties of FePc organic semiconductor thin films obtained by CSP technique for photovoltaic applications

dc.authorid0000-0003-3463-2009
dc.authorscopusid18042707800
dc.authorscopusid55613591800
dc.authorwosidTatar, Beyhan/ABA-6195-2020
dc.contributor.authorTatar, Beyhan
dc.contributor.authorDemiroğlu, Dilek
dc.date.accessioned2022-05-11T14:29:31Z
dc.date.available2022-05-11T14:29:31Z
dc.date.issued2015
dc.departmentFakülteler, Fen Edebiyat Fakültesi, Fizik Bölümü
dc.description.abstractIron-phthalocyanine (FePc) organic semiconductor thin films were prepared on Corning glass and c-Si substrates at a substrate temperature of 150 degrees C by a chemical spray pyrolysis (CSP) technique. The structural properties of the FePc thin films were determined by an X-Ray Diffraction (XRD) analysis and Raman Spectroscopy. Surface morphology of FePc films was determined by Scanning Electron Microscopy (SEM). The XRD pattern indicated that the films were microcrystalline in nature of FePc thin films that crystallized in the orthorhombic alpha-phase structure with preferential orientation along the (200) direction. We determined 22 Raman active peaks belonging to FePc thin films and our results are compatible with polarized Raman spectra. The electrical properties of FePc organic thin films were investigated by Hall Effect measurements. The electrical parameters of FePc films such as Carrier concentrations, Conductivity (sigma), Resistivity (rho), Mobility (mu) and Hall coefficient were determined from the Hall measurements at room temperature. The electrical transport and diode parameters of FePc/c-Si organic-inorganic hybrid heterojunctions were investigated by current-voltage (I-V) measurements at room temperature under dark condition. The current-voltage characteristics of FePc/c-Si hybrid heterojunctions demonstrated good rectifying behavior and have good photosensitivity under light conditions. The barrier heights and ideality factor values of FePc/n-Si and FePc/p-Si hybrid heterojunctions were found to be 1.54, 4.07 and 0.97, 1.1 eV, respectively. (C) 2015 Elsevier Ltd. All rights reserved.
dc.description.sponsorshipScientific and Technological Research Council of Turkey Engineering Research GroupTurkiye Bilimsel ve Teknolojik Arastirma Kurumu (TUBITAK) [112M319]
dc.description.sponsorshipThis work was carried out with the support of The Scientific and Technological Research Council of Turkey Engineering Research Group (Project no: 112M319). The authors are thankful to TUBITAK.
dc.identifier.doi10.1016/j.mssp.2014.12.078
dc.identifier.endpage650
dc.identifier.issn1369-8001
dc.identifier.issn1873-4081
dc.identifier.scopus2-s2.0-84921326243
dc.identifier.scopusqualityQ1
dc.identifier.startpage644
dc.identifier.urihttps://doi.org/10.1016/j.mssp.2014.12.078
dc.identifier.urihttps://hdl.handle.net/20.500.11776/7015
dc.identifier.volume31
dc.identifier.wosWOS:000350513500088
dc.identifier.wosqualityQ1
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.institutionauthorTatar, Beyhan
dc.language.isoen
dc.publisherElsevier Sci Ltd
dc.relation.ispartofMaterials Science in Semiconductor Processing
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectFePc
dc.subjectOSC materials
dc.subjectHall effect
dc.subjectElectrical properties
dc.subjectHybrid heterojunctions
dc.subjectIron Phthalocyanine Fepc
dc.subjectSpray-Pyrolysis
dc.subjectHeterojunction
dc.subjectTransport
dc.subjectSpectra
dc.subjectGrowth
dc.subjectSi
dc.titleElectrical properties of FePc organic semiconductor thin films obtained by CSP technique for photovoltaic applications
dc.typeArticle

Dosyalar

Orijinal paket
Listeleniyor 1 - 1 / 1
Küçük Resim Yok
İsim:
7018.pdf
Boyut:
1.85 MB
Biçim:
Adobe Portable Document Format
Açıklama:
Tam Metin / Full Text