Sol-gel derived ZnO:Sn thin films and fabrication of n-ZnO:Sn/p-Si heterostructure

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dc.authorscopusid54913094300
dc.authorscopusid15049656000
dc.authorscopusid6508101272
dc.authorscopusid56627311400
dc.authorscopusid18036952100
dc.contributor.authorSarıca, Emrah
dc.contributor.authorGüneş, İbrahim
dc.contributor.authorAkyüz, İdris
dc.contributor.authorBilgin, Vildan
dc.contributor.authorErtürk, Kadir
dc.date.accessioned2022-05-11T14:03:20Z
dc.date.available2022-05-11T14:03:20Z
dc.date.issued2021
dc.departmentFakülteler, Fen Edebiyat Fakültesi, Fizik Bölümü
dc.description.abstractIn this work ZnO:Sn thin films were deposited onto glass and p-Si substrates by spin coating of prepared sols which contains different amounts of Zn(CH3COO)2·2H2O and SnCl2 (0, 5, 10 and 15%). Physical properties of ZnO films were examined as a function of SnCl2 in prepared sols. In addition to that, heterostructure examinations were also carried out by depositing all films on p-Si substrates as well. XRD studies revealed that all films have c-axis orientation with crystallite sizes between 38 and 47 nm. AFM and SEM images showed that morphology of the films remarkably deteriorated with the increase in amount of SnCl2 in sol. Optical transmittance and absorbance spectra showed that films have high transmittance and low absorbance in the visible region. Besides, optical band gap increased from 3.27 eV to 3.37 eV. Additional band gap energies were determined for 10% and 15% Sn doped ZnO films. Room temperature photoluminescence spectra for all films were deconvoluted for the evaluation of all emission bands and it was noted that incorporation of SnCl2 into sol led to enhancement of UV-blue emission bands and caused emission bands related to oxygen vacancies to diminish. Four-point-probe measurements revealed that electrical resistivity of ZnO:Sn films increased from 3.20 × 100 ?cm to 2.82 × 104 ?cm and diode ideality factor of Ag/ZnO:Sn/p-Si/Au heterostructure was calculated to be in the range of 2.14–4.59 while zero-bias barrier height is in the range of 0.63–0.78 eV. © 2021 Elsevier B.V.
dc.description.sponsorship182N19
dc.description.sponsorshipThis work was supported by the Bursa Technical University Scientific Research Projects Committee under the project number 182N19.
dc.identifier.doi10.1016/j.optmat.2021.111283
dc.identifier.issn0925-3467
dc.identifier.scopus2-s2.0-85107737387
dc.identifier.scopusqualityQ1
dc.identifier.urihttps://doi.org/10.1016/j.optmat.2021.111283
dc.identifier.urihttps://hdl.handle.net/20.500.11776/4674
dc.identifier.volume118
dc.identifier.wosWOS:000674489500005
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.institutionauthorErtürk, Kadir
dc.language.isoen
dc.publisherElsevier B.V.
dc.relation.ispartofOptical Materials
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectAg/ZnO:Sn/Si/Au
dc.subjectPhotoluminescence
dc.subjectSpin coating
dc.subjectThermionic emission
dc.subjectTin doping
dc.subjectZinc oxide
dc.subjectChlorine compounds
dc.subjectConductive films
dc.subjectCrystallite size
dc.subjectEnergy gap
dc.subjectFilm preparation
dc.subjectMetallic films
dc.subjectMorphology
dc.subjectOptical films
dc.subjectOxide films
dc.subjectPhotoluminescence
dc.subjectSemiconductor doping
dc.subjectSilicon compounds
dc.subjectSol-gel process
dc.subjectSpin coating
dc.subjectSpin glass
dc.subjectThermionic emission
dc.subjectThin films
dc.subjectTin oxides
dc.subjectZinc coatings
dc.subjectZinc oxide
dc.subjectAg/ZnO:sn/si/au
dc.subjectEmission bands
dc.subjectProperty
dc.subjectSi substrates
dc.subjectSol'gel
dc.subjectThin-films
dc.subjectTin doping
dc.subjectXRD studies
dc.subjectZnO
dc.subjectZnO films
dc.subjectII-VI semiconductors
dc.titleSol-gel derived ZnO:Sn thin films and fabrication of n-ZnO:Sn/p-Si heterostructure
dc.typeArticle

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