Characterization of CdS films and CdS/Si heterojunctions prepared by ultrasonic spray pyrolysis and their response to light

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dc.authorscopusid56627311400
dc.authorscopusid54913094300
dc.authorscopusid54912121800
dc.authorscopusid18036952100
dc.contributor.authorBilgin, Vildan
dc.contributor.authorSarica, E.
dc.contributor.authorDemirselcuk, B.
dc.contributor.authorErtürk, Kadir
dc.date.accessioned2022-05-11T14:03:17Z
dc.date.available2022-05-11T14:03:17Z
dc.date.issued2020
dc.departmentFakülteler, Fen Edebiyat Fakültesi, Fizik Bölümü
dc.description.abstractIn this work CdS thin films were deposited onto glass and p-Si substrates by ultrasonically spraying of precursor solutions prepared in molarity ranging from 0.025 M, to 0.1 M. Structural investigations revealed that all films have hexagonal structure and mean crystallite size was found to be in the range of 18 nm–21 nm. On the other hand, CdS films exhibited 65–70% optical transmittance and band gap energy for all films was found to be about 2.42 eV. Electrical measurements of CdS/Si heterojunctions were carried out under both dark and illumination conditions. Calculated ideality factor and zero-bias barrier height ranged from 3.02 to 2.66 and 0.74 eV–0.78 eV according to TE theory whereas they ranged from 6.91 to 4.73 and 0.71 eV–0.74 eV according to Cheungs’ method. Increase in reverse saturation current when heterojunctions were illuminated indicated that they have good sensitivity to solar light. © 2020 Elsevier B.V.
dc.description.sponsorshipTürkiye Bilimsel ve Teknolojik Araştirma Kurumu, TÜBITAK: 111T057
dc.description.sponsorshipThis work was supported by The Scientific and Technological Research Council of Turkey (TÜBİTAK) under the project number 111T057 .
dc.identifier.doi10.1016/j.physb.2020.412499
dc.identifier.issn0921-4526
dc.identifier.scopus2-s2.0-85091898477
dc.identifier.scopusqualityQ2
dc.identifier.urihttps://doi.org/10.1016/j.physb.2020.412499
dc.identifier.urihttps://hdl.handle.net/20.500.11776/4660
dc.identifier.volume599
dc.identifier.wosWOS:000583242600005
dc.identifier.wosqualityQ3
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.institutionauthorErtürk, Kadir
dc.language.isoen
dc.publisherElsevier B.V.
dc.relation.ispartofPhysica B: Condensed Matter
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectCdS films
dc.subjectCdS/Si heterojunctions
dc.subjectCurrent-voltage characteristics
dc.subjectOptical properties
dc.subjectStructural properties
dc.subjectUltrasonic spray pyrolysis
dc.subjectCadmium sulfide
dc.subjectCrystallite size
dc.subjectEnergy gap
dc.subjectFilm preparation
dc.subjectHeterojunctions
dc.subjectII-VI semiconductors
dc.subjectSilicon
dc.subjectSilicon compounds
dc.subjectSpray pyrolysis
dc.subjectThin films
dc.subjectElectrical measurement
dc.subjectHexagonal structures
dc.subjectIdeality factors
dc.subjectIllumination conditions
dc.subjectPrecursor solutions
dc.subjectReverse-saturation currents
dc.subjectStructural investigation
dc.subjectUltrasonic spray pyrolysis
dc.subjectSulfur compounds
dc.titleCharacterization of CdS films and CdS/Si heterojunctions prepared by ultrasonic spray pyrolysis and their response to light
dc.typeArticle

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