Investigation of band gap energy versus temperature for SnS2 thin films grown by RF-magnetron sputtering

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dc.authorscopusid23766993100
dc.authorscopusid36766075800
dc.authorscopusid57193666915
dc.authorscopusid55660608000
dc.authorscopusid7003589218
dc.authorscopusid35580905900
dc.contributor.authorIşık, M.
dc.contributor.authorGüllü, H. H.
dc.contributor.authorTerlemezoğlu, Makbule
dc.contributor.authorSurucu, O.B.
dc.contributor.authorParlak, Mehmet
dc.contributor.authorGasanly, Nizami Mamed
dc.date.accessioned2022-05-11T14:03:17Z
dc.date.available2022-05-11T14:03:17Z
dc.date.issued2020
dc.departmentFakülteler, Fen Edebiyat Fakültesi, Fizik Bölümü
dc.description.abstractSnS2 thin films grown by magnetron sputtering technique were characterized by structurally and optically in the present work. Crystalline parameters, atomic compositions, and surface characteristics of SnS2 thin films were presented according to results of applied structural techniques. Optical studies of SnS2 thin films were accomplished by Raman spectroscopy and transmission methods. Raman spectrum exhibited two modes around 198 and 320 cm?1. Transmittance data obtained for various temperatures between 10 and 300 K were analyzed to reveal various optical characteristics like band gap energy, variation rate of gap energy with temperature, average phonon energy, gap energy at absolute zero. Band gap energy of SnS2 thin films were reported as 2.18 and 2.22 eV at 300 and 10 K, respectively. The temperature-band gap energy dependency was analyzed taking into account the Varshni and O'Donnell-Chen models. © 2020 Elsevier B.V.
dc.identifier.doi10.1016/j.physb.2020.412264
dc.identifier.issn0921-4526
dc.identifier.scopus2-s2.0-85084548982
dc.identifier.scopusqualityQ2
dc.identifier.urihttps://doi.org/10.1016/j.physb.2020.412264
dc.identifier.urihttps://hdl.handle.net/20.500.11776/4662
dc.identifier.volume591
dc.identifier.wosWOS:000542594600005
dc.identifier.wosqualityQ3
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.institutionauthorTerlemezoğlu, Makbule
dc.language.isoen
dc.publisherElsevier B.V.
dc.relation.ispartofPhysica B: Condensed Matter
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectMagnetron sputtering
dc.subjectOptical properties
dc.subjectSnS2
dc.subjectThin film
dc.subjectEnergy gap
dc.subjectIV-VI semiconductors
dc.subjectMagnetron sputtering
dc.subjectSemiconducting tin compounds
dc.subjectThin films
dc.subjectAtomic compositions
dc.subjectCrystalline parameters
dc.subjectOptical characteristics
dc.subjectPhonon energies
dc.subjectrf-Magnetron sputtering
dc.subjectStructural techniques
dc.subjectSurface characteristics
dc.subjectTransmission methods
dc.subjectTin compounds
dc.titleInvestigation of band gap energy versus temperature for SnS2 thin films grown by RF-magnetron sputtering
dc.typeArticle

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