Temperature dependence of band gaps in sputtered SnSe thin films

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dc.authorscopusid55751932500
dc.authorscopusid23766993100
dc.authorscopusid36766075800
dc.authorscopusid57193666915
dc.authorscopusid55660608000
dc.authorscopusid7003589218
dc.authorscopusid35580905900
dc.contributor.authorDelice, S.
dc.contributor.authorIşık, M.
dc.contributor.authorGüllü, H. H.
dc.contributor.authorTerlemezoğlu, Makbule
dc.contributor.authorBayraklı Sürücü, Özge
dc.contributor.authorParlak, Mehmet
dc.contributor.authorGasanly, Nizami Mamed
dc.date.accessioned2022-05-11T14:03:16Z
dc.date.available2022-05-11T14:03:16Z
dc.date.issued2019
dc.departmentFakülteler, Fen Edebiyat Fakültesi, Fizik Bölümü
dc.description.abstractTemperature-dependent transmission experiments were performed for tin selenide (SnSe) thin films deposited by rf magnetron sputtering method in between 10 and 300 K and in the wavelength region of 400–1000 nm. Transmission spectra exhibited sharp decrease near the absorption edge around 900 nm. The transmittance spectra were analyzed using Tauc relation and first derivative spectroscopy techniques to get band gap energy of the SnSe thin films. Both of the applied methods resulted in existence of two band gaps with energies around 1.34 and 1.56 eV. The origin of these band gaps was investigated and it was assigned to the splitting of valence band into two bands due to spin-orbit interaction. Alteration of these band gap values due to varying sample temperature of the thin films were also explored in the study. It was seen that the gap energy values increased almost linearly with decreasing temperature as expected according to theoretical knowledge. © 2019 Elsevier Ltd
dc.identifier.doi10.1016/j.jpcs.2019.03.004
dc.identifier.endpage26
dc.identifier.issn0022-3697
dc.identifier.scopus2-s2.0-85062893878
dc.identifier.scopusqualityQ2
dc.identifier.startpage22
dc.identifier.urihttps://doi.org/10.1016/j.jpcs.2019.03.004
dc.identifier.urihttps://hdl.handle.net/20.500.11776/4657
dc.identifier.volume131
dc.identifier.wosWOS:000468250500004
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.institutionauthorTerlemezoğlu, Makbule
dc.language.isoen
dc.publisherElsevier Ltd
dc.relation.ispartofJournal of Physics and Chemistry of Solids
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectOptical properties
dc.subjectSnSe
dc.subjectThin film
dc.subjectEnergy gap
dc.subjectLayered semiconductors
dc.subjectMagnetron sputtering
dc.subjectOptical properties
dc.subjectSelenium compounds
dc.subjectTemperature distribution
dc.subjectTin compounds
dc.subjectRF magnetron sputtering method
dc.subjectSnSe
dc.subjectSpin orbit interactions
dc.subjectTemperature dependence
dc.subjectTemperature dependent
dc.subjectTransmission experiments
dc.subjectTransmission spectrums
dc.subjectTransmittance spectra
dc.subjectThin films
dc.titleTemperature dependence of band gaps in sputtered SnSe thin films
dc.typeArticle

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