Investigation of precursor sequence and post-annealing effects on the properties of Cu2SnZnSe4 thin films deposited by the elemental thermal evaporation

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dc.authorid0000-0001-7912-0176
dc.authorid0000-0002-8478-1267
dc.authorid0000-0001-9542-5121
dc.authorid0000-0001-8541-5309
dc.authorscopusid55660608000
dc.authorscopusid57193666915
dc.authorscopusid36766075800
dc.authorscopusid7003589218
dc.authorwosidTerlemezoglu, Makbule/ABA-5010-2020
dc.authorwosidSURUCU, Ozge/ABA-4839-2020
dc.authorwosidGULLU, HASAN HUSEYIN/F-7486-2019
dc.authorwosidparlak, mehmet/ABB-8651-2020
dc.contributor.authorBayraklı Sürücü, Özge
dc.contributor.authorTerlemezoğlu, Makbule
dc.contributor.authorGüllü, H. H.
dc.contributor.authorParlak, Mehmet
dc.date.accessioned2022-05-11T14:29:33Z
dc.date.available2022-05-11T14:29:33Z
dc.date.issued2017
dc.departmentFakülteler, Fen Edebiyat Fakültesi, Fizik Bölümü
dc.description.abstractCu2ZnSnSe4 (CZTSe) thin films were deposited onto soda lime glass substrates by thermal evaporation using the pure elemental sources. The influence of the sequential deposition order of Zn and Sn precursor layers for different evaporation cycles were investigated. In situ annealing at 400 degrees C under Se evaporation was applied to promote conversion of precursor layers to quaternary compound structure and additionally, subsequent post-annealing processes under nitrogen atmosphere at 450 degrees C was carried out to improve the crystalline behavior. The analyses concluded that the substrate temperature kept at 400 degrees C during selenization was not adequate to form homogenous CZTSe structure and as a result of post-annealing treatment, the polycrystalline quaternary CZTSe film structure was obtained. Structural analysis showed that in comparison with the initial Sn precursor layer, the growth process starting with Zn was found to be the preferable method to form better crystalline CZTSe structure. Furthermore, the stacking layer order and annealing processes showed the important effect on the stoichiometry and surface morphology of the films. The optical band gap energies were around 1.10 eV and also from Tauc plots, 1.40 eV was observed due to the admixture of secondary phases. The room temperature resistivity values and hole carrier densities were obtained around 10(-2) Omega cm and 1019 cm(-3), respectively. The mobility values of the samples were found in between 0.51 and 0.75 cm(2) V-1 s(-1).
dc.identifier.doi10.1088/2053-1591/aa852d
dc.identifier.issn2053-1591
dc.identifier.issue8en_US
dc.identifier.scopus2-s2.0-85029178805
dc.identifier.scopusqualityQ2
dc.identifier.urihttps://doi.org/10.1088/2053-1591/aa852d
dc.identifier.urihttps://hdl.handle.net/20.500.11776/7030
dc.identifier.volume4
dc.identifier.wosWOS:000408512700002
dc.identifier.wosqualityQ4
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.institutionauthorTerlemezoğlu, Makbule
dc.language.isoen
dc.publisherIop Publishing Ltd
dc.relation.ispartofMaterials Research Express
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectthin film
dc.subjectCu2ZnSnSe4
dc.subjectthermal evaporation
dc.subjectZn
dc.subjectSn precursor
dc.subjectSolar-Cells
dc.subjectCu2znsns4
dc.subjectEfficiency
dc.subjectFabrication
dc.subjectCrystals
dc.titleInvestigation of precursor sequence and post-annealing effects on the properties of Cu2SnZnSe4 thin films deposited by the elemental thermal evaporation
dc.typeArticle

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