Electrical characterization of CdZnTe/Si diode structure

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dc.authorscopusid57218115047
dc.authorscopusid57193666915
dc.authorscopusid36766075800
dc.authorscopusid16023635100
dc.authorscopusid7003589218
dc.contributor.authorBalbasi, C.D.
dc.contributor.authorTerlemezoğlu, Makbule
dc.contributor.authorGüllü, H. H.
dc.contributor.authorYıldız, D. E.
dc.contributor.authorParlak, Mehmet
dc.date.accessioned2022-05-11T14:03:17Z
dc.date.available2022-05-11T14:03:17Z
dc.date.issued2020
dc.departmentFakülteler, Fen Edebiyat Fakültesi, Fizik Bölümü
dc.description.abstractTemperature-dependent current-voltage (I- V) , and frequency dependent capacitance-voltage (C- V) and conductance-voltage (G- V) measurements were performed in order to analyze characteristics of CdZnTe/Si structure. Obtained profiles enable us to understand the different characteristics of the diode structure such as the carrier conduction mechanism and the nature of the interfacial layer. Over the temperature range between 220 and 340 K, taking consideration of the disparity in the forward-biased current, the diode parameters such as saturation current (I) , zero-bias barrier height (? B) and ideality factor (n) have been obtained. The barrier height increased (0.53 to 0.80 eV) while the ideality factor decreased (4.63 to 2.79) with increasing temperature from 220 to 340 K, indicating an improvement in the junction characteristics at high temperatures. Due to the inhomogeneity in barrier height, the conduction mechanism was investigated by Gaussian distribution analysis. Hence, the mean zero-bias barrier height (? ¯ B) and zero-bias standard deviation (?) were calculated as 1.31 eV and 0.18, respectively. Moreover, for holes in p-type Si, Richardson constant was found to be 32.09 A cm?2 K?2 via modified Richardson plot. Using the capacitance-voltage (C- V) and conductance-voltage (G- V) characteristics, series resistance (Rs) and density of interfacial traps (Dit) have been also investigated in detail. A decreasing trend for Rs and Dit profiles with increasing frequency was observed due to the impurities at the CdZnTe/Si interface and interfacial layer between the front metal contact and CdZnTe film. © 2020, Springer-Verlag GmbH Germany, part of Springer Nature.
dc.identifier.doi10.1007/s00339-020-03772-3
dc.identifier.issn0947-8396
dc.identifier.issue8en_US
dc.identifier.scopus2-s2.0-85087969314
dc.identifier.scopusqualityQ2
dc.identifier.urihttps://doi.org/10.1007/s00339-020-03772-3
dc.identifier.urihttps://hdl.handle.net/20.500.11776/4661
dc.identifier.volume126
dc.identifier.wosWOS:000553133500001
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.institutionauthorTerlemezoğlu, Makbule
dc.language.isoen
dc.publisherSpringer
dc.relation.ispartofApplied Physics A: Materials Science and Processing
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectCdZnTe
dc.subjectGaussian distribution
dc.subjectInterface traps
dc.subjectThin film
dc.subjectTransport mechanism
dc.subjectBias voltage
dc.subjectCadmium alloys
dc.subjectDiodes
dc.subjectElectric resistance
dc.subjectII-VI semiconductors
dc.subjectSemiconductor alloys
dc.subjectSilicon
dc.subjectZinc alloys
dc.subjectCapacitance voltage
dc.subjectConduction Mechanism
dc.subjectElectrical characterization
dc.subjectFrequency-dependent capacitance
dc.subjectIncreasing temperatures
dc.subjectRichardson constant
dc.subjectSeries resistances
dc.subjectTemperature dependent
dc.subjectCapacitance
dc.titleElectrical characterization of CdZnTe/Si diode structure
dc.typeArticle

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